Tabla de Contenidos:
  • Front Cover; Semiconductors and Semimetals, Volume 20; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. High-Purity LEC Growth and Direct Implantation of GaAs for Monolithic Microwave Circuits; List of Symbols; I. Introduction; II. Large-Diameter GaAs Crystal Growth; III. Compositional Purity; IV. Electrical Properties; V. Direct Ion Implantation; VI. GaAs Materials Processing; References; Chapter 2. Ion Implantation and Materials for GaAs Integrated Circuits; List of Acronyms; I. Introduction; II. Materials Preparation; III. Ion Implantation; IV. Device Results; V. Summary.
  • v. Electronic Transition Phenomena Involving Flaws, and the Square-Well Potential and Billiard-Ball ModelsVI. Techniques Based on Molecular Orbitals; VII. Pseudopotential Representations; VIII. Green's Function Method; IX. Brief Notes on Other Approaches; References; Index; Contents of Previous Volumes.