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Chemical mechanical polishing in silicon processing /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landm...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego, CA :
Academic Press,
�2000.
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| Colección: | Semiconductors and semimetals ;
v. 63. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Chemical Mechanical Polishing in Silicon Processing; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Introduction; I. CMP: A Unique and Evolving Semiconductor Fabrication Technology-Past, Present, and Future; Chapter 2. Equipment; I. Introduction; II. CMP Equipment Design Evolution; III. Carriers; IV. Platens; V. Pad Conditioning; VI. CMP Equipment Integration; VII. Copper Polishing and CMP Tool Requirements; VIII. 300-mm CMP Tools; IX. Conclusion; References; Chapter 3. Facilitization; I. Introduction; II. Outline; III. Slurry Distribution System Overview.
- IV. Slurry HandlingV. Slurry Distribution Systems; VI. Slurry Dispense Engines; VII. Slurry Blending Technology; VIII. Slurry Measuring Techniques; IX. Daytank Replenishment; X. Mix Order; XI. Piping Systems; XII. Piping System Variations; XIII. Materials of Construction; XIV. Slurry Settling; XV. Slurry Room Location; XVI. Pressure and Flow Consistency; XVII. Back-Pressure Devices; XVIII. Slurry Consumption Ramp; XIX. System Redundancy; XX. Valve Boxes; XXI. Storage Tanks; XXII. Agitation; XXIII. Metrology; XXIV. Filtration; XXV. Slurry System Maintenance; XXVI. Waste Disposal; References.
- Chapter 4. Modeling and SimulationI. Introduction; II. Wafer-Scale Models; III. Patterned Wafer CMP Modeling; IV. Die-Level Modeling of Ild CMP; V. Models for Metal Polishing; VI. Summary and Status; References; Chapter 5. Consumables I: Slurry; I. Introduction; II. Abrasives; III. Slurry Solution; IV. Comparisons Among Slurries; References; Chapter 6. CMP Consumablesii: Pad; I. Introduction; II. Classes of Pads and Their Manufacture; III. Structure, Properties, and Their Relationship to the Polishing Process; IV. Application to Semiconductor Processing; References; Chapter 7. Post-CMP Clean.
- I. IntroductionII. Surface Configurations after CMP Processes; III. Cleaning Requirements after CMP Processes; IV. Corrosion Effects; V. Slurry Removal; VI. Metallic Contamination Removal; VII. Damaged Layer Removal; VIII. Final Passivation; IX. Examples of Practical Post-CMP Cleaning Processes; X. Conclusion; References; Chapter 8. CMP Metrology; I. Introduction; II. Reflectometry; III. Defectivity Monitoring; IV. Noncontact Capacitive Measurement; V. Total X-Ray Fluorescence; VI. Stylus Profilometry (Force Measurement); VII. Atomic Force Microscopy; VIII. Four-Point Probe; References.
- Chapter 9. Applications and CMP-Related Process ProblemsI. Introduction; II. Oxide CMP Within-Wafer Nonuniformity (WIWNU); III. Post-CMP Oxide Thickness Control; IV. Defectivity; V. Tungsten CMP Problems; VI. Other Problems; References; Index; Contents of Volumes in This Series.