Gallium nitride (GaN). II /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
Clasificación: | Libro Electrónico |
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Otros Autores: | , |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
San Diego ; London :
Academic,
�1999.
|
Colección: | Semiconductors and semimetals ;
v. 57. |
Temas: | |
Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Gallium Nitride (GaN) II; Copyright Page; Contents; Preface; List of Contributors; CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides; List of Acronyms and Abbreviations; I. Introduction; II. Nitride HVPE Growth; III. GaN Film Characterization; IV. Light-Emitting Diodes; V. HVPE for Nitride Substrates; VI. Conclusions; References; CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy; I . Introduction; II. Background of Molecular Beam Epitaxy Techniques; III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy; IV. GaN Films.
- v. InGaAlN AlloysVI. Multiquantum Wells; VII. Device Applications; VIII. Conclusions; References; CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers; I. Introduction; II. Polarity of the Crystals; III. Defect Distribution; IV. Nanotubes; V. PL and Point Defects; VI. Influence of Annealing; VII. Larger-Dimension Bulk GaN Crystals; VIII. Homoepitaxial Layers; IX. Summary; References; CHAPTER 4. Hydrogen in III-V Nitrides; I. Introduction; II. Theoretical Framework; III. Experimental Observations; IV. Conclusions and Outlook; References.
- CHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium NitrideI. Introduction; II. Materials Preparation; III. Shallow Dopants; IV. Deep Level Defects; V. Conclusions; References; CHAPTER 6. Stress Effects on Optical Properties; I. Introduction; II. The Crystalline Structures of III-Nitrides; III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides; IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings; V. Origin of the Strain; VI. Phonons Under Strain Fields; VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure.
- VIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum WellsIX. Self-Organized Quantum Boxes; X. Conclusion; References; CHAPTER 7. Strain in GaN Thin Films and Heterostructures; I. Thin-Film Growth at Low Temperatures; II. Stress/Strain Relations; III. Control of Hydrostatic and Biaxial Stress and Strain Components; IV. Strained AlN/InN/GaN Heterostructures; V. Perspectives; References; CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride; I. Introduction; II. Background; III. Second-Order Nonlinear Optical Phenomena; IV. Third-Order Nonlinear Optical Phenomena.
- v. Potential DevicesVI. Conclusions; References; CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides; I. Introduction; II. Magnetic Resonance-The Basis of Identification; III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results); IV. Shallow and Deep Donors in GaN (ODMR Results); V. Shallow and Deep Acceptors in GaN; VI. Defects Induced by Particle Irradiation in GaN and AIN; VII. Device-Related Magnetic Resonance Studies; VIII. Transition Metal Impurities; IX. Outlook; References; Chapter 10. GaN and AIGaN Utraviolet Detectors; I. Introduction; II. Principle of Operation.