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Gallium nitride (GaN). II /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego ; London :
Academic,
�1999.
|
| Colección: | Semiconductors and semimetals ;
v. 57. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 003 | OCoLC | ||
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| 008 | 081222s1999 caua ob 001 0 eng d | ||
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| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 245 | 0 | 0 | |a Gallium nitride (GaN). |n II / |c volume editors, Jacques I. Pankove, Theodore D. Moustakas. |
| 260 | |a San Diego ; |a London : |b Academic, |c �1999. | ||
| 300 | |a 1 online resource (xvi, 489 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 57 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry | ||
| 505 | 0 | |a Front Cover; Gallium Nitride (GaN) II; Copyright Page; Contents; Preface; List of Contributors; CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides; List of Acronyms and Abbreviations; I. Introduction; II. Nitride HVPE Growth; III. GaN Film Characterization; IV. Light-Emitting Diodes; V. HVPE for Nitride Substrates; VI. Conclusions; References; CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy; I . Introduction; II. Background of Molecular Beam Epitaxy Techniques; III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy; IV. GaN Films. | |
| 505 | 8 | |a v. InGaAlN AlloysVI. Multiquantum Wells; VII. Device Applications; VIII. Conclusions; References; CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers; I. Introduction; II. Polarity of the Crystals; III. Defect Distribution; IV. Nanotubes; V. PL and Point Defects; VI. Influence of Annealing; VII. Larger-Dimension Bulk GaN Crystals; VIII. Homoepitaxial Layers; IX. Summary; References; CHAPTER 4. Hydrogen in III-V Nitrides; I. Introduction; II. Theoretical Framework; III. Experimental Observations; IV. Conclusions and Outlook; References. | |
| 505 | 8 | |a CHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium NitrideI. Introduction; II. Materials Preparation; III. Shallow Dopants; IV. Deep Level Defects; V. Conclusions; References; CHAPTER 6. Stress Effects on Optical Properties; I. Introduction; II. The Crystalline Structures of III-Nitrides; III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides; IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings; V. Origin of the Strain; VI. Phonons Under Strain Fields; VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure. | |
| 505 | 8 | |a VIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum WellsIX. Self-Organized Quantum Boxes; X. Conclusion; References; CHAPTER 7. Strain in GaN Thin Films and Heterostructures; I. Thin-Film Growth at Low Temperatures; II. Stress/Strain Relations; III. Control of Hydrostatic and Biaxial Stress and Strain Components; IV. Strained AlN/InN/GaN Heterostructures; V. Perspectives; References; CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride; I. Introduction; II. Background; III. Second-Order Nonlinear Optical Phenomena; IV. Third-Order Nonlinear Optical Phenomena. | |
| 505 | 8 | |a v. Potential DevicesVI. Conclusions; References; CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides; I. Introduction; II. Magnetic Resonance-The Basis of Identification; III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results); IV. Shallow and Deep Donors in GaN (ODMR Results); V. Shallow and Deep Acceptors in GaN; VI. Defects Induced by Particle Irradiation in GaN and AIN; VII. Device-Related Magnetic Resonance Studies; VIII. Transition Metal Impurities; IX. Outlook; References; Chapter 10. GaN and AIGaN Utraviolet Detectors; I. Introduction; II. Principle of Operation. | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Gallium nitride. | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Nitrure de gallium. |0 (CaQQLa)201-0286098 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Gallium nitride |2 fast |0 (OCoLC)fst00937295 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Moustakas, T. D. | |
| 700 | 1 | |a Pankove, Jacques I., |d 1922- | |
| 776 | 0 | 8 | |i Print version: |t Gallium nitride (GaN). II. |d San Diego ; London : Academic, �1999 |z 012544057X |z 9780125440578 |w (OCoLC)46433925 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 57. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521664 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/57 |z Texto completo |