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Lightwave communications technology. Part D, Photodetectors /
SEMICONDUCTORS & amp; SEMIMETALS V22.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando :
Academic Press,
1985.
|
| Colección: | Semiconductors and semimetals ;
v. 22, pt. D. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Lightwave Communications Technology; Copyright Page; Contents; List of Contributors; Treatise Foreword; Foreword; Preface; Chapter 1. Physics of Avalanche Photodiodes; I. Introduction; II. Theory of Impact Ionization; III. Avalanche Multiplication and Measurement of Ionization Rates; IV. Avalanche Photodiodes with Enhanced Ionization Rate Ratios and Solid-State Photomultipliers; References; Chapter 2. Compound Semiconductor Photodiodes; I. Introduction; II. Compound Semiconductor Photodiode Principles; III. Compound Semiconductor Photodiode Properties.
- IV. Integrated Photodiode DevicesReferences; Chapter 3. Silicon and Germanium Avalanche Photodiodes; I. Introduction; II. Design Considerations; III. Silicon Avalanche Photodiodes; IV. Germanium Avalanche Photodiodes; V. Minimum Detectable Power; VI. Concluding Comments; References; Chapter 4. Sensitivity of Avalanche Photodetector Receivers for High-Bit-Rate Long-Wavelength Optical Communication Systems; I. Introduction; II. Digital Receiver Sensitivity; III. Receiver Noise Current; IV. Sensitivity Calculations; V. Examples; VI. Sources of Sensitivity Degradation; VII. Conclusions.