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Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization /
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristi...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1997.
|
| Colección: | Semiconductors and semimetals ;
v. 45. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Ion Implantation into Semiconductors: Historical Perspectives; I. Introduction; II. Early History; III. Ion Implanters; IV. Metal-Oxide Semiconductor Devices; V. Bipolar Devices; VI. Conclusions; References; Chapter 2. Electronic Stopping Power for Energetic Ions in Solids; I. Introduction; II. General Theory; III. Electronic Stopping Power for Protons.
- IV. Electronic Stopping Power for Heavy IonsV. Electronic Stopping Power for Molecular Ions; VI. Summary; References; Chapter 3. Solid Effect on the Electronic Stopping of Crystalline Target and Application to Range Estimation; I. Introduction; II. Local Density Approximation for Binary Collision; III. Impact Parameter-Dependence of the Electronic Stopping Power in Crystalline Solids; IV. Electronic Stopping Power of Chemical Compounds; V. Electronic Stopping Power and Range Profiles via Computer Simulations; VI. Concluding Remarks; References.
- Chapter 4. Ion Beams in Amorphous Semiconductor ResearchI. Introduction; II. Ion Beam Production of Amorphous Silicon; III. Ion Beam Doping of Plasma-Deposited Amorphous Silicon; IV. Structural and Configurational Changes in Amorphous Silicon; References; Chapter 5. Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors; I. Introduction; II. Sheet Resistance Measurement; III. Spreading Resistance Probes Profiling; IV. Applications; V. Summary; References; Chapter 6. Studies of the Stripping Hall Effect in Ion-Implanted Silicon; I. Introduction.
- II. Survey of Basic TheoryIII. Applications of the Technique; IV. Conclusions; References; Chapter 7. Transmission Electron Microscopy Analyses; I. Introduction; II. Transmission Electron Microscopy; III. Defects Produced by Ion Implantation, Transmission Electron Microscopy; IV. Implantation Using Molecular Ions; V. Implantation Conditions Inhibiting the Formation of End-of-Range Defects; VI. Material Modification by Ion Beam Synthesis; VII. Ion-Beam-Induced Epitaxial Crystallization; VIII. Closing Remarks; References.
- Chapter 8. Rutherford Backscattering Studies of Ion Implanted SemiconductorsI. Introduction; II. Measurement of Disorder Depth Profiles by RBS-Channeling; III. Typical Results for Silicon and Silicon Carbide; References; Chapter 9. X-ray Diffraction Techniques; I. Introduction; II. Basic Aspects of Crystal Lattice Modification Due to Ion-Implantation; III. X-ray Methods to Analyze Implanted Samples; IV. Examples of Special Applications; V. Summary; References; Index; Contents of Volumes in This Series.