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High speed heterostructure devices /
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of In...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1994.
|
| Colección: | Semiconductors and semimetals ;
v. 41. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a High speed heterostructure devices / |c volume editors, Richard A. Kiehl, T.C.L. Gerhard Sollner. |
| 260 | |a Boston : |b Academic Press, |c �1994. | ||
| 300 | |a 1 online resource (xii, 454 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 41 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; High Speed Heterostructure Devices; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Quantum Electron Devices: Physics and Applications; I. Introduction; II. Resontant-Tunneling Diodes; III. Resonant Tunneling Bipolar Transistors (RTBTs) with Double Barrier in the Base; IV. Devices with Multiple-Peak I-V Characteristics and Multiple-State RTBTs; V. Circuit Applications; VI. Unipolar Resonant Tunneling Transistors; VII. Superlattice Transport and Quantum Reflections; VIII. Field-Induced Localization in Vertical and Parallel Transport; Acknowledgments; References. | |
| 505 | 8 | |a Chapter 2. GaAs-Gate Semiconductor-Insulator-Semiconductor FETI. Introduction-Basic Principles; II. History and Development of SISFETs and Related Devices; III. SIS Capacitors; IV. Design of Vertical Structure; V. Processing Issues; VI. FET Characteristics; VII. SISFET Modeling; VIII. Circuit Results; IX. Discussion and Future Perspective; Acknowledgments; References; Chapter 3. Unipolar InP-Based Transistors; I. Introduction; II. Growth of InP-Based Structures; III. InP Field Effect Transistors (FETs); IV. High Electron Mobility Transistors (HEMTs); V. Summary; VI. Acknowledgments. | |
| 505 | 8 | |a v. Nonequilibrium Electron Transport in HBTsVI. Device Characteristics and Limiting Factors; VII. Implementation of HBTs in Integrated Circuits; VIII. Summary and Prospects; References; Chapter 6. High-Frequency Resonant-Tunneling Devices; I. Introduction; II. Times in Resonant Tunneling; III. High-Frequency Applications; IV. Future Expectations; Acknowledgments; References; List of Variables; Chapter 7. Resonant-Tunneling Hot-Electron Transistors and Circuits; I. Introduction; II. Hot Electron Transport in RHETs; III. RHET dc and Microwave Characteristics; IV. RHET Circuit Applications. | |
| 505 | 8 | |a v. RHET Room-Temperature OperationVI. Summary; Acknowledgment; References; Index; Contents of Volumes in This Series. | |
| 506 | 1 | |a Legal Deposit; |c Only available on premises controlled by the deposit library and to one user at any one time; |e The Legal Deposit Libraries (Non-Print Works) Regulations (UK). |5 WlAbNL | |
| 540 | |a Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force. |5 WlAbNL | ||
| 650 | 0 | |a Heterostructures. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Electronic apparatus and appliances. | |
| 650 | 0 | |a Electronic systems. | |
| 650 | 6 | |a H�et�erostructures. |0 (CaQQLa)201-0259129 | |
| 650 | 6 | |a Circuits �electroniques. |0 (CaQQLa)201-0028164 | |
| 650 | 6 | |a Syst�emes �electroniques. |0 (CaQQLa)201-0021883 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
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| 650 | 7 | |a Electronic circuits |2 fast |0 (OCoLC)fst00906874 | |
| 650 | 7 | |a Electronic systems |2 fast |0 (OCoLC)fst00907484 | |
| 650 | 7 | |a Heterostructures |2 fast |0 (OCoLC)fst00955801 | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 650 | 7 | |a Non-m�etaux. |2 ram | |
| 700 | 1 | |a Kiehl, Richard A. | |
| 700 | 1 | |a Sollner, T. C. L. Gerhard. | |
| 776 | 0 | 8 | |i Print version: |t High speed heterostructure devices. |d Boston : Academic Press, �1994 |z 0127521410 |z 9780127521411 |w (DLC) 85642319 |w (OCoLC)30676697 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 41. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521411 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/41 |z Texto completo |