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Imperfections in III/V materials /
SEMICONDUCTORS & amp; SEMIMETALS V38.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1993.
|
| Colección: | Semiconductors and semimetals ;
v. 38. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Imperfections in III/V Materials; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Density-Functional Theory of sp-Bonded Defects in III/V Semiconductors; I. Introduction; II. Thermodynamics of Defects in Semiconductors; III. Ab-lnitio Calculation of the Electronic Ground State and of Atomic Vibrations; IV. Methods and Techniques; V. Electronic Structures and Concentrations of Native Defects; VI. An Intrinsic Metastability of Antisite and Antisite-like Defects; VII. The EL2 Defect; VIII. The DX Centers; Acknowledgment; References; Chapter 2. EL2 Defect in GaAs.
- I. IntroductionII. Properties of EL2 Defect; III. Arsenic Antisite Defect in GaAs; IV. Energy Levels of EL2 Defect; V. Models of EL2 Defect; VI. Conclusions; References; Chapter 3. Defects Relevant for Compensation in Semi-insulating GaAs; I. Introduction; II. Compensation in Bulk GaAs; Ill. The Calculation of Compensation; IV. Known Defects in GaAs; V. The As-Precipitate Model for Compensation; VI. Summary; References; Chapter 4. Local Vibrational Made Spectroscopy of Defects in III/V Compounds; I. Introduction; II. Localized Vibrational Mode Spectroscopy; III. Oxygen Impurities.
- IV. Beryllium ImpuritiesV. Carbon Impurities; VI. Boron Impurities; VII. Silicon Impurities; VIII. Hydrogen Passivation of Shallow Impurities; IX. Radiation Damage; X. Conclusions; Note; Acknowledgments; References; Chapter 5. Transition Metals in III/V Compounds; I. Introduction; II. General Properties of Transition Metal Impurities; III. 3dn Transition Metals; IV. 4dn and 5dn Transition Metals; V. Semi-insulating TM-Doped III/V Materials; Appendices; References; Chapter 6. DX and Related Defects in Semiconductors; I. Introduction; II. Electrical Properties; III. Optical Properties.
- IV. Models of DXV. Microscopic Structure of the DX Center; VI. Magnetic Properties of DX: The Negative-U Issue; VII. Technology and DX; VIII. Summary; Acknowledgments; References; Chapter 7. Dislocations in III/V Compounds; I. Introduction; II. Dislocation Types and Structures; III. Mechanical Properties; IV. Dislocation Generation and Reduction during Growth of Bulk Crystals; V. Dislocations and Device Performance; Note; References; Chapter 8. Deep Level Defects in the Epitaxial III/V Materials; I. Introduction; II. Observation of Deep States in Epitaxial Layers; III. Epitaxial Binaries.
- IV. Epitaxial Ternaries and QuaternariesV. Quantum Wells, Superlattices, and Interfaces; VI. Deep Levels in Structurally Disordered III/V Layers; VII. Conclusion; References; Chapter 9. Structural Defects in Epitaxial III/V Layers; I. Introduction; II. Homoepitaxy; III. Heteroepitaxy; IV. Methods to Decrease the Defest Density in the Epitaxial Layers; V. Conclusions; Acknowledgment; References; Chapter 10. Defects io Metal/III/V Heterostructures; I. Introduction; II. Movement of the Fermi Level and Departures from GaAs Stoichiometry; III. A Model to Explain Fermi Level Moment.