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Imperfections in III/V materials /
SEMICONDUCTORS & amp; SEMIMETALS V38.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1993.
|
| Colección: | Semiconductors and semimetals ;
v. 38. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 003 | OCoLC | ||
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| 008 | 081219s1993 maua ob 001 0 eng d | ||
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| 050 | 4 | |a QC610.9 |b .S48eb vol. 38 | |
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| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 245 | 0 | 0 | |a Imperfections in III/V materials / |c volume editor, Eicke R. Weber. |
| 260 | |a Boston : |b Academic Press, |c �1993. | ||
| 300 | |a 1 online resource (xiv, 498 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 38 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; Imperfections in III/V Materials; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Density-Functional Theory of sp-Bonded Defects in III/V Semiconductors; I. Introduction; II. Thermodynamics of Defects in Semiconductors; III. Ab-lnitio Calculation of the Electronic Ground State and of Atomic Vibrations; IV. Methods and Techniques; V. Electronic Structures and Concentrations of Native Defects; VI. An Intrinsic Metastability of Antisite and Antisite-like Defects; VII. The EL2 Defect; VIII. The DX Centers; Acknowledgment; References; Chapter 2. EL2 Defect in GaAs. | |
| 505 | 8 | |a I. IntroductionII. Properties of EL2 Defect; III. Arsenic Antisite Defect in GaAs; IV. Energy Levels of EL2 Defect; V. Models of EL2 Defect; VI. Conclusions; References; Chapter 3. Defects Relevant for Compensation in Semi-insulating GaAs; I. Introduction; II. Compensation in Bulk GaAs; Ill. The Calculation of Compensation; IV. Known Defects in GaAs; V. The As-Precipitate Model for Compensation; VI. Summary; References; Chapter 4. Local Vibrational Made Spectroscopy of Defects in III/V Compounds; I. Introduction; II. Localized Vibrational Mode Spectroscopy; III. Oxygen Impurities. | |
| 505 | 8 | |a IV. Beryllium ImpuritiesV. Carbon Impurities; VI. Boron Impurities; VII. Silicon Impurities; VIII. Hydrogen Passivation of Shallow Impurities; IX. Radiation Damage; X. Conclusions; Note; Acknowledgments; References; Chapter 5. Transition Metals in III/V Compounds; I. Introduction; II. General Properties of Transition Metal Impurities; III. 3dn Transition Metals; IV. 4dn and 5dn Transition Metals; V. Semi-insulating TM-Doped III/V Materials; Appendices; References; Chapter 6. DX and Related Defects in Semiconductors; I. Introduction; II. Electrical Properties; III. Optical Properties. | |
| 505 | 8 | |a IV. Models of DXV. Microscopic Structure of the DX Center; VI. Magnetic Properties of DX: The Negative-U Issue; VII. Technology and DX; VIII. Summary; Acknowledgments; References; Chapter 7. Dislocations in III/V Compounds; I. Introduction; II. Dislocation Types and Structures; III. Mechanical Properties; IV. Dislocation Generation and Reduction during Growth of Bulk Crystals; V. Dislocations and Device Performance; Note; References; Chapter 8. Deep Level Defects in the Epitaxial III/V Materials; I. Introduction; II. Observation of Deep States in Epitaxial Layers; III. Epitaxial Binaries. | |
| 505 | 8 | |a IV. Epitaxial Ternaries and QuaternariesV. Quantum Wells, Superlattices, and Interfaces; VI. Deep Levels in Structurally Disordered III/V Layers; VII. Conclusion; References; Chapter 9. Structural Defects in Epitaxial III/V Layers; I. Introduction; II. Homoepitaxy; III. Heteroepitaxy; IV. Methods to Decrease the Defest Density in the Epitaxial Layers; V. Conclusions; Acknowledgment; References; Chapter 10. Defects io Metal/III/V Heterostructures; I. Introduction; II. Movement of the Fermi Level and Departures from GaAs Stoichiometry; III. A Model to Explain Fermi Level Moment. | |
| 520 | |a SEMICONDUCTORS & amp; SEMIMETALS V38. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |x Defects. | |
| 650 | 6 | |a Semi-conducteurs |x D�efauts. |0 (CaQQLa)201-0318262 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |x Defects. |2 fast |0 (OCoLC)fst01112211 | |
| 650 | 7 | |a Transporte Eletronico E Propriedades Eletricas De Superficies, Interfaces E Peliculas. |2 larpcal | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 700 | 1 | |a Weber, Eicke R. | |
| 776 | 0 | 8 | |i Print version: |t Imperfections in III/V materials. |d Boston : Academic Press, �1993 |z 0127521380 |z 9780127521381 |w (OCoLC)28040303 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 38. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521381 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/38 |z Texto completo |