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Hydrogen in semiconductors /
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review o...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1991.
|
| Colección: | Semiconductors and semimetals ;
v. 34. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Hydrogen in Semiconductors; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Hydrogen in Semiconductors; References; Chapter 2. Hydrogenation Methods; I. Introduction; II. Plasma and Directed Ion Beam Hydrogenation Methods; III. Electrochemical Techniques; VI. Other Observations of Hydrogenation; References; Chapter 3. Hydrogenation of Defects in Crystalline Silicon; I. Introduction; II. Hydrogenation Technique; III. Passivation of Surface States; IV. Passivation of Grain Boundaries; V. Passivation of Dislocations.
- VI. Passivation of Implantation-Induced DefectsVII. Conclusion; References; Chapter 4. Hydrogen Passivation of Damage Centers in Semiconductors; I. Introduction; II. Brief Survey of Defects; III. Electrical Studies; IV. Infrared Studies; V. Summary; Acknowledgments; References; Chapter 5. Neutralization of Deep Levels in Silicon; I. Role and Nature of Deep Levels in Si; II. Types of Defects and Impurities Passivated; III. Thermal Stability of Passivation; IV. Prehydrogenation; V. Models for Deep Level Passivation; References; Chapter 6. Neutralization of Shallow Acceptors in Silicon.
- I. IntroductionII. Resistivity Changes Induced by Hydrogenation; III. Capacitance Changes Induced by Hydrogenation; IV. Models of Neutralized Boron in Silicon; V. Changes in IR Absorption Induced by Hydrogenation; VI. Effect of Hydrogenation on the Luminescence of Excitons Bound; VII. Applications of Hydrogen-Mediated Compensation in Silicon; VIII. Conclusion; References; Chapter 7. Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon; I. Introduction; II. Neutralization of Shallow-Donor Impurities; III. Hydrogen-Induced Defects; IV. Future Directions.