Cargando…
Hydrogen in semiconductors /
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review o...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1991.
|
| Colección: | Semiconductors and semimetals ;
v. 34. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn285445341 | ||
| 003 | OCoLC | ||
| 005 | 20231117015153.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 081215s1991 maua ob 001 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d OCLCQ |d E7B |d OCLCQ |d OCLCE |d OPELS |d OCLCQ |d OCLCO |d YDXCP |d IDEBK |d EBLCP |d OCLCQ |d DEBSZ |d OCLCQ |d MERUC |d OCLCQ |d LEAUB |d VLY |d OCLCO |d OCLCQ | ||
| 019 | |a 645846800 |a 646756736 |a 729017732 |a 760847022 |a 808732773 |a 816576769 |a 823124401 |a 823847383 |a 823917248 |a 824101404 |a 824159353 |a 1086510997 |a 1162095477 | ||
| 020 | |a 9780080864310 |q (electronic bk.) | ||
| 020 | |a 0080864317 |q (electronic bk.) | ||
| 020 | |a 0127521348 |q (electronic bk.) | ||
| 020 | |a 9780127521343 |q (electronic bk.) | ||
| 020 | |a 1282737198 | ||
| 020 | |a 9781282737198 | ||
| 020 | |a 9786612737190 | ||
| 020 | |a 6612737190 | ||
| 035 | |a (OCoLC)285445341 |z (OCoLC)645846800 |z (OCoLC)646756736 |z (OCoLC)729017732 |z (OCoLC)760847022 |z (OCoLC)808732773 |z (OCoLC)816576769 |z (OCoLC)823124401 |z (OCoLC)823847383 |z (OCoLC)823917248 |z (OCoLC)824101404 |z (OCoLC)824159353 |z (OCoLC)1086510997 |z (OCoLC)1162095477 | ||
| 042 | |a dlr | ||
| 050 | 4 | |a QC610.9 |b .S48eb vol. 34 | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/22 |2 22 |
| 084 | |a 33.60 |2 bcl | ||
| 245 | 0 | 0 | |a Hydrogen in semiconductors / |c volume editors, Jacques I. Pankove, Noble M. Johnson. |
| 260 | |a Boston : |b Academic Press, |c �1991. | ||
| 300 | |a 1 online resource (xiii, 629 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 34 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; Hydrogen in Semiconductors; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Hydrogen in Semiconductors; References; Chapter 2. Hydrogenation Methods; I. Introduction; II. Plasma and Directed Ion Beam Hydrogenation Methods; III. Electrochemical Techniques; VI. Other Observations of Hydrogenation; References; Chapter 3. Hydrogenation of Defects in Crystalline Silicon; I. Introduction; II. Hydrogenation Technique; III. Passivation of Surface States; IV. Passivation of Grain Boundaries; V. Passivation of Dislocations. | |
| 505 | 8 | |a VI. Passivation of Implantation-Induced DefectsVII. Conclusion; References; Chapter 4. Hydrogen Passivation of Damage Centers in Semiconductors; I. Introduction; II. Brief Survey of Defects; III. Electrical Studies; IV. Infrared Studies; V. Summary; Acknowledgments; References; Chapter 5. Neutralization of Deep Levels in Silicon; I. Role and Nature of Deep Levels in Si; II. Types of Defects and Impurities Passivated; III. Thermal Stability of Passivation; IV. Prehydrogenation; V. Models for Deep Level Passivation; References; Chapter 6. Neutralization of Shallow Acceptors in Silicon. | |
| 505 | 8 | |a I. IntroductionII. Resistivity Changes Induced by Hydrogenation; III. Capacitance Changes Induced by Hydrogenation; IV. Models of Neutralized Boron in Silicon; V. Changes in IR Absorption Induced by Hydrogenation; VI. Effect of Hydrogenation on the Luminescence of Excitons Bound; VII. Applications of Hydrogen-Mediated Compensation in Silicon; VIII. Conclusion; References; Chapter 7. Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon; I. Introduction; II. Neutralization of Shallow-Donor Impurities; III. Hydrogen-Induced Defects; IV. Future Directions. | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |x Hydrogen content. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |x Teneur en hydrog�ene. |0 (CaQQLa)201-0376008 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Condutores eletricos. |2 larpcal | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 700 | 1 | |a Pankove, Jacques I., |d 1922- | |
| 700 | 1 | |a Johnson, Noble M. | |
| 776 | 0 | 8 | |i Print version: |t Hydrogen in semiconductors. |d Boston : Academic Press, �1991 |z 0127521348 |z 9780127521343 |w (OCoLC)23290827 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 34. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521343 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/34 |z Texto completo |