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Mercury cadmium telluride /

SEMICONDUCTORS & amp; SEMIMETALS V18.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Willardson, Robert K., Beer, Albert C.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Academic Press, 1981.
Colección:Semiconductors and semimetals ; v. 18.
Temas:
Acceso en línea:Texto completo
Texto completo
Tabla de Contenidos:
  • Front Cover; Semiconductors and Semimetals, Volume 18; Copyright Page; Contents; List of Contributors; Preface; Nomenclature; Chapter 1. The Emergence of (Hg1-xCdx)Te as a Modern Infrared Sensitive Material; I. Historical Overview; II. Review of the Electrical, Optical, and Structural Properties; References; Chapter 2. Preparation of High-Purity Cadmium, Mercury, and Tellurium; I. Introduction; II. Purification Processes; III. Purification of Cadmium; IV. Purification of Mercury; V. Purification of Tellurium; VI. Special Products for (CdHg)Te Preparation; References.
  • Chapter 3. The Crystal Growth of Cadmium Mercury TellurideI. Introduction; II. Crystal Growth by the Quench/Recrystallization Method; III. Liquid/Solid Growth; IV. Epitaxial Growth; V. Other Considerations; References; Chapter 4. Auger Recombination in Mercury Cadmium Telluride; I. Introduction; II. Auger Lifetime in Nondegenerate Material; III. Auger Lifetime in Degenerate Material; IV. Experimental Results; V. Summary; Appendix; References; Chapter 5. (HgCd)Te Photoconductive Detectors; I. Introduction; II. Performance Parameters; III. Simple Photoconductivity.
  • IV. Photoconductive Device AnalysesV. Photoconductive Device Design; VI. Technology of (HgCd)Te Detectors; References; Chapter 6. Photovoltaic Infrared Detectors; I. Introduction; II. Theory of p-n Junction Photodiodes; III. Hg1-xCdx Te Junction Photodiode Technology; IV. Summary and Conclusions; References; Chapter 7. Metal-Insulator-Semiconductor Infrared Detectors; I. Introduction; II. MIS Theory; III. (HgCd)Te MIS Experimental Data; IV. (HgCd)Te MIS Photodiode Technology; V. (HgCd)Te Charge Transfer Device Technology; VI. Summary; References; Index; Contents of Previous Volumes.