Cargando…

Internal photoemission spectroscopy : principles and applications /

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Afanas�ev, V. V.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Oxford, UK ; Boston : Elsevier, 2008.
Edición:1st ed.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 a 4500
001 SCIDIR_ocn228147983
003 OCoLC
005 20231117015105.0
006 m o d
007 cr cn|||||||||
008 080516s2008 enka ob 001 0 eng d
040 |a OPELS  |b eng  |e pn  |c OPELS  |d OCLCQ  |d E7B  |d OCLCQ  |d OCLCF  |d OCLCQ  |d OTZ  |d D6H  |d OCLCQ  |d WYU  |d LEAUB  |d OL$  |d VLY  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCO 
019 |a 647691998  |a 994900558  |a 1065009527  |a 1162262288 
020 |a 9780080451459 
020 |a 0080451454 
020 |a 1281096113 
020 |a 9781281096111 
020 |a 9786611096113 
020 |a 6611096116 
020 |a 0080555896 
020 |a 9780080555898 
035 |a (OCoLC)228147983  |z (OCoLC)647691998  |z (OCoLC)994900558  |z (OCoLC)1065009527  |z (OCoLC)1162262288 
050 4 |a QD96.A8  |b A39 2008eb 
082 0 4 |a 543/.52  |2 22 
100 1 |a Afanas�ev, V. V. 
245 1 0 |a Internal photoemission spectroscopy :  |b principles and applications /  |c Valery V. Afanas�ev. 
250 |a 1st ed. 
260 |a Oxford, UK ;  |a Boston :  |b Elsevier,  |c 2008. 
300 |a 1 online resource (xvi, 295 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
520 |a The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors. 
505 0 |a List of Abbreviations -- List of Symbols -- Preface -- Chapter 1. Preliminary Remarks and Historical Overview -- Chapter 2. Internal versus External Photoemission -- Chapter 3. Model Description and Experimental Realization of IPE -- Chapter 4. Internal Photoemission Spectroscopy Methods -- Chapter 5. Injection Spectroscopy of Thin Layers of Solids: Internal Photoemission as Compared to Other Injection Methods -- Chapter 6. Trapped Charge Monitoring and Characterization -- Chapter 7. Charge Trapping Kinetics in the Injection-Limited Current Regime -- Chapter 8. Transport Effects in Charge Trapping -- Chapter 9. Semiconductor-Insulator Interface Barriers -- Chapter 10. Electron Energy Barriers Between Conducting and Insulating Materials -- Chapter 11. Spectroscopy of Charge Traps in Thin Insulating Layers -- Chapter 12. Conclusions -- References. 
504 |a Includes bibliographical references (pages 263-289) and index. 
588 0 |a Print version record. 
546 |a English. 
650 0 |a Photoelectron spectroscopy. 
650 0 |a Photoemission. 
650 0 |a Semiconductors  |x Junctions. 
650 6 |a Spectroscopie de photo�electrons.  |0 (CaQQLa)201-0053922 
650 6 |a Photo�emission.  |0 (CaQQLa)201-0089673 
650 6 |a Semi-conducteurs  |x Jonctions.  |0 (CaQQLa)201-0318266 
650 7 |a Photoelectron spectroscopy  |2 fast  |0 (OCoLC)fst01061561 
650 7 |a Photoemission  |2 fast  |0 (OCoLC)fst01061564 
650 7 |a Semiconductors  |x Junctions  |2 fast  |0 (OCoLC)fst01112231 
776 0 8 |i Print version:  |a Afanas�ev, V.V.  |t Internal photoemission spectroscopy.  |b 1st ed.  |d Oxford, UK ; Boston : Elsevier, 2008  |z 9780080451459  |z 0080451454  |w (OCoLC)166379668 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780080451459  |z Texto completo