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Processing and properties of compound semiconductors /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landm...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�2001.
|
| Colección: | Semiconductors and semimetals ;
v. 73. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a Processing and properties of compound semiconductors / |c volume editors, R. Willardson, H.S. Nalwa. |
| 260 | |a San Diego : |b Academic Press, |c �2001. | ||
| 300 | |a 1 online resource (ix, 321 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals, |x 0080-8784 ; |v v. 73 | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. | ||
| 588 | 0 | |a Print version record. | |
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; Processing and Properties of Compound Semiconductors: Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Chapter 1. Introduction; 1. Introduction; 2. Wet Etching; References; Chapter 2. Gallium Arsenide Heterostructures; 1. Introduction; 2. Crystal Growth and Properties of GaAs; 3. Growth and Material Properties of GaAs Heterostructures; 4. Physical Properties of GaAs-Based Quantum Well Structures and Superlattices; References; Chapter 3. Growth and Optical Properties of GaN; 1. Introduction; 2. Gallium Nitride and its Growth on Different Substrates. | |
| 505 | 8 | |a 3. Line Width and Quantum Beats in GaN4. Time-Resolved Spectroscopy of GaN Epilayers; 5. p-GaN; 6. n-GaN; 7. Optical Pumping and Lasing in GaN Epilayers and Heterostructures; 8. GaN Quantum Wells; References; Chapter 4. SiGe/Si Processing; 1. Introduction; 2. SiGe/Si Material Properties and Processing Challenges; References; Chapter 5. Advances in Quantum Dot Structures; 1. Introduction; 2. Physical Properties; 3. State of the Art; References; Chapter 6. Wet Etching of III-V Semiconductors; 1. Introduction; 2. Semiconductor Electrochemistry: Basic Principles and Experimental Methods. | |
| 505 | 8 | |a 3. Types of Etching Reactions4. Some Solid-State and Electrochemical Data on III-V Semiconductors; 5. Kinetics and Mechanisms of Etching Reactions at III-V Semiconductors; 6. Material-Selective Etching; 7. Etch Morphologies and Profiles; 8. Conclusions; References; Index; Contents of Volumes in This Series. | |
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Compound semiconductors |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 650 | 7 | |a Semiconducteurs �a l'ars�eniure de gallium. |2 ram | |
| 700 | 1 | |a Willardson, Robert K. | |
| 700 | 1 | |a Nalwa, Hari Singh, |d 1954- | |
| 776 | 0 | 8 | |i Print version: |t Processing and properties of compound semiconductors. |d San Diego : Academic Press, �2001 |z 0127521828 |z 9780127521824 |w (OCoLC)48233016 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 73. |x 0080-8784 | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521824 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/73 |z Texto completo |