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Silicon-Germanium Strained Layers and Heterostructures /
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...
| Cote: | Libro Electrónico |
|---|---|
| Autres auteurs: | , |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
San Diego, CA ; London :
Academic,
2003.
|
| Édition: | [Second edition]. |
| Collection: | Semiconductors and semimetals ;
v. 74. |
| Sujets: | |
| Accès en ligne: | Texto completo Texto completo Texto completo |
Table des matières:
- Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.