Hydrogen in semiconductors II /

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Nickel, Norbert H.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: San Diego, Calif. ; London : Academic, �1999.
Colección:Semiconductors and semimetals ; v. 61.
Temas:
Semiconductors > Hydrogen content.
Metals > Hydrogen content.
Hydrogen > Electric properties.
Semi-conducteurs > Teneur en hydrog�ene.
M�etaux > Teneur en hydrog�ene.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Fisica geral.
Semiconducteurs > Teneur en hydrog�ene.
Hydrog�ene > Propri�et�es �electriques.
Acceso en línea:Texto completo
Texto completo
Tabla de Contenidos:
  • Front Cover; Hydrogen in Semiconductors II; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Introduction to Hydrogen in Semiconductors; Chapter 2. Isolated Monatomic Hydrogen in Silicon; I. Introduction; II. Theory; III. Experment; IV. Conclusions; References; Chapter 3. Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon; I. Introduction; II. Interstitial (BC) Hydrogen in Silicon; III. EPR of Hydrogen-Related Complexes in Silicon; IV. Hydrogen-Induced Effects in Silicon; V. Summary and Conclusions; References.
  • Chapter 4. Hydrogen in Polycrystalline SiliconI. Introduction; II. Experimental Techniques; III. Hydrogen Diffusion; IV. Hydrogen Passivation of Grain-Boundary Defects; V. Metastability; VI. Hydrogen-Induced Defects During Plasma Exposure; VII. Summary and Future Directions; References; Chapter 5. Hydrogen Phenomena in Hydrogenated Amorphous Silicon; I. Introduction; II. Material Characterization by Hydrogen Effusion and Infrared Absorption; III. Experimental Hydrogen Diffusion and Solubility Data; IV. Hydrogen Diffusion and Effusion Effects; V. Hydrogen Solubility Effects; VI. Conclusions.
  • III. Identification and Characterization of Muonium StatesIV. Dynamics of Muonium Transitions; V. Relevance to Hydrogen Impurities; References; Chapter 9. Hydrogen in III-V and II-VI Semiconductors; I. Introduction; II. Hydrogen in III-V Semiconductors; III. Hydrogen in II-VI Semiconductors; IV. Summary and Discussion; References; Chapter 10. The Properties of Hydrogen in GaN and Related Alloys; I . Introduction; II. Hydrogen in As-Grown Nitrides; III. Dopant Passivation; IV. Diffusion and Reactivation Mechanisms; V. Role of Hydrog during Processing; VI. Theory of Hydrogen in Nitrides.
  • VII. Summary and conclusionsReferences; Chapter 11. Theory of Hydrogen in GaN; I. Introduction; II. Method; III. Monatomic Hydrogen in Gan; IV. Hydrogen Molecules in Gan; V. Hydroggen -Acceptor Complexes in Gan; VI. Complexes of H with Native Defects; VII. Role of Hydrogen in Doping Gan; VIII. General Criteria for Hydrogan to Enhance Doping; IX. Concllsions and Outlook; References; Index; Contents of Volumes in This Series.

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