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Hydrogen in semiconductors II /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego, Calif. ; London :
Academic,
�1999.
|
| Colección: | Semiconductors and semimetals ;
v. 61. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn172890035 | ||
| 003 | OCoLC | ||
| 005 | 20231117033324.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 070917s1999 caua ob 001 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d YDXCP |d BTCTA |d OCLCQ |d IDEBK |d OCLCQ |d MERUC |d OCLCQ |d EBLCP |d E7B |d OPELS |d OCLCF |d MYG |d OCLCQ |d DEBSZ |d OTZ |d OCLCQ |d D6H |d OCL |d UKMGB |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ | ||
| 015 | |a GBB739419 |2 bnb | ||
| 016 | 7 | |a 017583971 |2 Uk | |
| 019 | |a 171132538 |a 176887343 |a 648267376 |a 742284361 |a 808619285 |a 814452587 |a 823107543 |a 823828231 |a 823897947 |a 824089284 |a 824135685 | ||
| 020 | |a 9780080525259 |q (electronic bk.) | ||
| 020 | |a 0080525253 |q (electronic bk.) | ||
| 020 | |a 1281023442 | ||
| 020 | |a 9781281023445 | ||
| 020 | |a 0127521704 | ||
| 020 | |a 9780127521701 | ||
| 035 | |a (OCoLC)172890035 |z (OCoLC)171132538 |z (OCoLC)176887343 |z (OCoLC)648267376 |z (OCoLC)742284361 |z (OCoLC)808619285 |z (OCoLC)814452587 |z (OCoLC)823107543 |z (OCoLC)823828231 |z (OCoLC)823897947 |z (OCoLC)824089284 |z (OCoLC)824135685 | ||
| 050 | 4 | |a QC611.24 |b .H93 1999eb | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 072 | 7 | |a PHFC |2 bicssc | |
| 082 | 0 | 4 | |a 621.38152 |2 22 |
| 245 | 0 | 0 | |a Hydrogen in semiconductors II / |c editor, Norbert H. Nickel. |
| 260 | |a San Diego, Calif. ; |a London : |b Academic, |c �1999. | ||
| 300 | |a 1 online resource (xiv, 526 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v volume 61 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of th | ||
| 505 | 0 | |a Front Cover; Hydrogen in Semiconductors II; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Introduction to Hydrogen in Semiconductors; Chapter 2. Isolated Monatomic Hydrogen in Silicon; I. Introduction; II. Theory; III. Experment; IV. Conclusions; References; Chapter 3. Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon; I. Introduction; II. Interstitial (BC) Hydrogen in Silicon; III. EPR of Hydrogen-Related Complexes in Silicon; IV. Hydrogen-Induced Effects in Silicon; V. Summary and Conclusions; References. | |
| 505 | 8 | |a Chapter 4. Hydrogen in Polycrystalline SiliconI. Introduction; II. Experimental Techniques; III. Hydrogen Diffusion; IV. Hydrogen Passivation of Grain-Boundary Defects; V. Metastability; VI. Hydrogen-Induced Defects During Plasma Exposure; VII. Summary and Future Directions; References; Chapter 5. Hydrogen Phenomena in Hydrogenated Amorphous Silicon; I. Introduction; II. Material Characterization by Hydrogen Effusion and Infrared Absorption; III. Experimental Hydrogen Diffusion and Solubility Data; IV. Hydrogen Diffusion and Effusion Effects; V. Hydrogen Solubility Effects; VI. Conclusions. | |
| 505 | 8 | |a III. Identification and Characterization of Muonium StatesIV. Dynamics of Muonium Transitions; V. Relevance to Hydrogen Impurities; References; Chapter 9. Hydrogen in III-V and II-VI Semiconductors; I. Introduction; II. Hydrogen in III-V Semiconductors; III. Hydrogen in II-VI Semiconductors; IV. Summary and Discussion; References; Chapter 10. The Properties of Hydrogen in GaN and Related Alloys; I . Introduction; II. Hydrogen in As-Grown Nitrides; III. Dopant Passivation; IV. Diffusion and Reactivation Mechanisms; V. Role of Hydrog during Processing; VI. Theory of Hydrogen in Nitrides. | |
| 505 | 8 | |a VII. Summary and conclusionsReferences; Chapter 11. Theory of Hydrogen in GaN; I. Introduction; II. Method; III. Monatomic Hydrogen in Gan; IV. Hydrogen Molecules in Gan; V. Hydroggen -Acceptor Complexes in Gan; VI. Complexes of H with Native Defects; VII. Role of Hydrogen in Doping Gan; VIII. General Criteria for Hydrogan to Enhance Doping; IX. Concllsions and Outlook; References; Index; Contents of Volumes in This Series. | |
| 650 | 0 | |a Semiconductors |x Hydrogen content. | |
| 650 | 0 | |a Metals |x Hydrogen content. | |
| 650 | 0 | |a Hydrogen |x Electric properties. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |x Teneur en hydrog�ene. |0 (CaQQLa)201-0376008 | |
| 650 | 6 | |a M�etaux |x Teneur en hydrog�ene. |0 (CaQQLa)201-0021682 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Metals |x Hydrogen content. |2 fast |0 (OCoLC)fst01018149 | |
| 650 | 7 | |a Fisica geral. |2 larpcal | |
| 650 | 7 | |a Semiconducteurs |x Teneur en hydrog�ene. |2 ram | |
| 650 | 7 | |a Hydrog�ene |x Propri�et�es �electriques. |2 ram | |
| 700 | 1 | |a Nickel, Norbert H. | |
| 776 | 0 | 8 | |i Print version: |t Hydrogen in semiconductors II. |d San Diego, Calif. ; London : Academic, �1999 |z 0127521704 |z 9780127521701 |w (OCoLC)40840197 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 61. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521701 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/61 |z Texto completo |