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Advances in crystal growth research /
The aim of this book is to provide a timely collection that highlights advances in current research of crystal growth ranging from fundamental aspects to current applications involving a wide range of materials. This book is published on the basis of lecture texts of the 11th International Summer Sc...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York :
North-Holland,
2001.
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| Edición: | 1st ed. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Advances in crystal growth research / |c edited by K. Sato, Y. Furukawa, K. Nakajima. |
| 250 | |a 1st ed. | ||
| 260 | |a Amsterdam ; |a New York : |b North-Holland, |c 2001. | ||
| 300 | |a 1 online resource (xiv, 419 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a The aim of this book is to provide a timely collection that highlights advances in current research of crystal growth ranging from fundamental aspects to current applications involving a wide range of materials. This book is published on the basis of lecture texts of the 11th International Summer School on Crystal Growth (ISSCG-11) to be held at Doshisha Retreat Center in Shiga Prefecture Japan, on July 24-29, 2001. This school is always associated with the International Conference of Crystal Growth (ICCG) series that have been held every three years since 1973; thus this school continues the tradition of the past 10 schools of crystal growth. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Advances in Crystal Growth Research; Copyright Page; Contents; Preface; Acknowledgements; Chapter 1. Crystal growth-Its significance for modern science and technology and its possible future applications; 1. Introduction; 2. Morphology and crystal growth; 3. Synthesis of single crystals; 4. Surface and interface; 5. Lattice defects; 6. Synthesis of dislocation-free crystals; 7. Vapor growth and epitaxy; 8. Computer simulation; 9. Biomineralization and biocrystallization; 10. Concluding remarks (future targets); Part 1: Understanding of Fundamental Aspects in Crystal Growth | |
| 505 | 8 | |a Chapter 2. Fundamentals of phase field theory1. Introduction; 2. Monocomponent system; 3. Anisotropy; 4. Alloys; 5. Hydrodynamics; 6. Conclusions; Chapter 3. Generic mechanism of heterogeneous nucleation and molecular interfacial effect; 1. Introduction; 2. Nucleation barrier; 3. Nucleation kinetics; 4. Interfacial effects of foreign body and fluid molecules; 5. Heterogeneous two-dimensional nucleation growth; 6. General remarks and conclusions; Chapter 4. Challenges in crystal growth science and the microgravity tool; 1. Opportunities; 2. What is missing in crystal growth science? | |
| 505 | 8 | |a 3. Surface processes vs. bulk diffusion and convection. Dendrites4. Pattern formation; 5. Ripening; 6. Detached growth; 7. Biomacromolecular crystallization; 8. Conclusion; Chapter 5. Surface step dynamics: basic concepts, theory and simulation; 1. Basic idea of step models; 2. Step dynamics in a vicinal face; 3. Relaxation of mesoscopic structures; Chapter 6. Surface step dynamics: experimental observations; 1. Introduction; 2. Experimental; 3. Equilibrium shape (macroscopic approach); 4. Thermal fluctuation of steps (microscopic approach); 5. Mechanism of mass transport for step fluctuation | |
| 505 | 8 | |a 6. ConclusionChapter 7. Elementary growth process in semiconductor epitaxy-Molecular beam epitaxy as an example of epitaxy; 1. Introduction; 2. Incorporation diffusion length; 3. Intersurface diffusion; 4. Elementary growth processes; 5. Fabrication of microstructures; 6. Microchannel epitaxy by low angle incidence beam MBE; 7. Elimination of the growth on (111) facet adjacent to (001) facet; 8. Conclusions; Chapter 8. Atomistic simulation of epitaxial growth processes; 1. Introduction; 2. Computational methods; 3. Role of electrons on the surface; 4. Epitaxial growth simulation; 5. Summary | |
| 505 | 8 | |a Part 2: Materials Design and Functionality of Advanced MaterialsChapter 9. Si bulk crystal growth: what and how?; 1. Introduction; 2. Magnetic field-applied crystal growth; 3. Actual system; 4. Summary; Chapter 10. Optimization of melt growth processes by experimental analysis and computer modeling; 1. Introduction; 2. Strategy of process optimization in crystal growth; 3. Important features of industrial melt growth processes; 4. Physico-chemical model; 5. Numerical treatment; 6. Verification of numerical models by model experiments; 7. Process optimization; 8. Conclusion | |
| 546 | |a English. | ||
| 650 | 0 | |a Crystal growth |v Congresses. | |
| 650 | 6 | |a Cristaux |0 (CaQQLa)201-0039459 |x Croissance |0 (CaQQLa)201-0039459 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a SCIENCE |x Physics |x Crystallography. |2 bisacsh | |
| 650 | 7 | |a Crystal growth |2 fast |0 (OCoLC)fst00884619 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Sat�o, Kiyotaka, |d 1946- | |
| 700 | 1 | |a Furukawa, Y. |q (Yoshinori) | |
| 700 | 1 | |a Nakajima, K. |q (Kazuo) | |
| 711 | 2 | |a International Summer School on Crystal Growth |n (11th : |d 2001 : |c Doshisha Retreat Center) | |
| 776 | 0 | 8 | |i Print version: |t Advances in crystal growth research. |b 1st ed. |d Amsterdam ; New York : North-Holland, 2001 |z 0444507477 |z 9780444507471 |w (DLC) 2001044235 |w (OCoLC)47650594 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444507471 |z Texto completo |