Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 /

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This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokk...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Rapid Thermal Processing for Future Semiconductor Devices Ise-Shima, Mie, Japan
Otros Autores: Fukuda, Hisashi
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam ; London : Elsevier, 2003.
Temas:
Semiconductors > Heat treatment > Congresses.
Rapid thermal processing > Congresses.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Rapid thermal processing.
Semiconductors > Heat treatment.
Conference papers and proceedings.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Cover
  • Copyright Page
  • CONTENTS
  • Preface
  • RTP2001 Organization
  • Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century
  • Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities
  • Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing
  • Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals
  • Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication
  • Chapter 6. High-Performance Poly-Si TFT and its Application to LCD
  • Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs
  • Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
  • Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer
  • Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials
  • Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition
  • Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film
  • Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices
  • Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source
  • Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes
  • Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers
  • Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor
  • Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers
  • Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction
  • Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4
  • Last Page.

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