Cargando…
Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 /
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokk...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; London :
Elsevier,
2003.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn162131007 | ||
| 003 | OCoLC | ||
| 005 | 20231117014848.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 070802s2003 enka ob 100 0 eng d | ||
| 040 | |a OPELS |b eng |e pn |c OPELS |d OCLCQ |d N$T |d YDXCP |d OSU |d EBLCP |d MERUC |d E7B |d IDEBK |d OCLCQ |d OCLCF |d OCLCQ |d OCLCO |d DEBSZ |d OCLCQ |d OCL |d OCLCQ |d AGLDB |d OCLCQ |d STF |d D6H |d VTS |d NLE |d OCLCQ |d LEAUB |d M8D |d OCLCQ |d K6U |d S2H |d OCLCO |d OCLCQ | ||
| 019 | |a 173659277 |a 294856173 |a 441791561 |a 648306837 |a 1035658743 | ||
| 020 | |a 9780444513397 | ||
| 020 | |a 0444513396 | ||
| 020 | |a 9780080540269 |q (electronic bk.) | ||
| 020 | |a 0080540260 |q (electronic bk.) | ||
| 035 | |a (OCoLC)162131007 |z (OCoLC)173659277 |z (OCoLC)294856173 |z (OCoLC)441791561 |z (OCoLC)648306837 |z (OCoLC)1035658743 | ||
| 050 | 4 | |a TK7871.85 |b .I57665 2001eb | |
| 072 | 7 | |a TK |2 lcco | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 111 | 2 | |a International Conference on Rapid Thermal Processing for Future Semiconductor Devices |n (2nd : |d 2001 : |c Ise-Shima, Mie, Japan) | |
| 245 | 1 | 0 | |a Rapid thermal processing for future semiconductor devices : |b proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / |c edited by Hisashi Fukuda. |
| 260 | |a Amsterdam ; |a London : |b Elsevier, |c 2003. | ||
| 300 | |a 1 online resource (x, 150 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies. | ||
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page. | |
| 650 | 0 | |a Semiconductors |x Heat treatment |v Congresses. | |
| 650 | 0 | |a Rapid thermal processing |v Congresses. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Rapid thermal processing. |2 fast |0 (OCoLC)fst01090061 | |
| 650 | 7 | |a Semiconductors |x Heat treatment. |2 fast |0 (OCoLC)fst01112224 | |
| 655 | 7 | |a Conference papers and proceedings. |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 700 | 1 | |a Fukuda, Hisashi. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan). |t Rapid thermal processing for future semiconductor devices. |d Amsterdam ; London : Elsevier, 2003 |z 0444513396 |z 9780444513397 |w (DLC) 2003271753 |w (OCoLC)51668070 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444513397 |z Texto completo |