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III-nitride semiconductors : electrical, structural, and defects properties /
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor syst...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York :
Elsevier,
2000.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Introduction to defects and structural properties of III-nitride semiconductors (M.O. Manasreh). Dopants in GaN (J.T. Torvik). Defect engineering in III-nitrides epitaxial systems (S. Ruvimov). Magnetic resonance studies of defects in GaN and related compounds (M. Palczewska, M. Kaminska). Characterization of native point defects in GaN by positron annihilation spectroscopy (K. Saarinen). Persistent photoconductivity in III-nitrides (H.X. Jiang, J.Y. Lin). Ion implantation, isolation and thermal processing of GaN and related materials (B. Rauschenbach). Radiation and processed induced defects in GaN (F.D. Auret, S.A. Goodman). Residual stress in III-V nitrides (N.V. Edwards). Structural defects in nitride heteroepitaxy (M.E. Twigg, D.D. Koleske, A.E. Wickenden, et al). Optical phonon confinement in nitride-based heterostructures (N.A. Zakhleniuk, C.R. Bennet, M. Babiker, B.K. Ridley).