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Optoelectronic devices : III-nitrides /
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; San Diego ; Oxford :
Elsevier,
2004.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- The rise of III-nitrides : an introduction
- The evolution of nitride semiconductors
- Technology of MOVPE production tools
- MOCVD growth of Group III nitrides for high-power, high-frequency applications
- Growth of nitride quantum dots
- A1N epitaxial layers for UV photonics
- Properties of III-V Nitrides substrates and homoepitaxial layers
- III-nitride ultraviolet light emitting sources
- III-nitride UV photoconductors
- Quaternary InAlGaN-based UV LEDs
- design and fabrication of GaN high power rectifiers
- GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices
- Ferromagnetism in GaN and related materials
- Phonons and electron-phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications
- Phase separation and ordering in cubic ternary and quaternary nitride alloys
- Electronic properties of intrinsic and heavily doped 3C-, nH-SiC (n=2, 4, 6) and III-N (III=B, Al, Ga, In).