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Optoelectronic devices : III-nitrides /
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; San Diego ; Oxford :
Elsevier,
2004.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 020 | |z 9780080444260 | ||
| 020 | |z 0080444261 | ||
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| 100 | 1 | |a Razeghi, M. | |
| 245 | 1 | 0 | |a Optoelectronic devices : |b III-nitrides / |c M. Razeghi, M. Henini. |
| 260 | |a Amsterdam ; |a San Diego ; |a Oxford : |b Elsevier, |c 2004. | ||
| 300 | |a 1 online resource (xv, 575 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a The rise of III-nitrides : an introduction -- The evolution of nitride semiconductors -- Technology of MOVPE production tools -- MOCVD growth of Group III nitrides for high-power, high-frequency applications -- Growth of nitride quantum dots -- A1N epitaxial layers for UV photonics -- Properties of III-V Nitrides substrates and homoepitaxial layers -- III-nitride ultraviolet light emitting sources -- III-nitride UV photoconductors -- Quaternary InAlGaN-based UV LEDs -- design and fabrication of GaN high power rectifiers -- GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices -- Ferromagnetism in GaN and related materials -- Phonons and electron-phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications -- Phase separation and ordering in cubic ternary and quaternary nitride alloys -- Electronic properties of intrinsic and heavily doped 3C-, nH-SiC (n=2, 4, 6) and III-N (III=B, Al, Ga, In). | |
| 520 | |a Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Optoelectronic devices. | |
| 650 | 0 | |a Nitrides. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Nitrides. |2 fast |0 (OCoLC)fst01037993 | |
| 650 | 7 | |a Optoelectronic devices. |2 fast |0 (OCoLC)fst01046908 | |
| 700 | 1 | |a Henini, Mohamed. | |
| 776 | 0 | 8 | |i Print version: |a Razeghi, M. |t Optoelectronic devices. |d Amsterdam ; San Diego ; Oxford : Elsevier, 2004 |z 0080444261 |z 9780080444260 |w (OCoLC)56657528 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080444260 |z Texto completo |