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Molecular beam epitaxy : applications to key materials /
In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emp...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Park Ridge, N.J. :
Noyes Publications,
�1995.
|
| Colección: | Materials science and process technology series. Electronic materials and process technology.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Ma 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocm49708235 | ||
| 003 | OCoLC | ||
| 005 | 20231117015147.0 | ||
| 006 | m o d | ||
| 007 | cr un||||||||| | ||
| 008 | 011109s1995 njua ob 001 0 eng d | ||
| 040 | |a KNOVL |b eng |e pn |c KNOVL |d OCLCQ |d TEF |d DEBSZ |d OCLCQ |d OPELS |d UMC |d N$T |d UWW |d IDEBK |d E7B |d KNOVL |d ZCU |d KNOVL |d OCLCF |d COO |d OCLCQ |d OCLCO |d KNOVL |d OCLCQ |d TEF |d VT2 |d OCLCQ |d UAB |d D6H |d OCLCQ |d CEF |d RRP |d OCLCQ |d WYU |d LEAUB |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 49270511 |a 281598721 |a 311118041 |a 646782973 |a 961887714 |a 988638736 |a 999539726 |a 1065698792 | ||
| 020 | |a 1591240956 |q (electronic bk.) | ||
| 020 | |a 9781591240952 |q (electronic bk.) | ||
| 020 | |a 9780815518402 |q (electronic bk.) | ||
| 020 | |a 0815518404 |q (electronic bk.) | ||
| 020 | |a 9780815518389 |q (electronic bk.) | ||
| 020 | |a 0815518382 |q (electronic bk.) | ||
| 020 | |a 9780080946115 |q (e-book) | ||
| 020 | |a 0080946119 |q (e-book) | ||
| 020 | |z 9780815513711 | ||
| 020 | |z 0815513712 | ||
| 035 | |a (OCoLC)49708235 |z (OCoLC)49270511 |z (OCoLC)281598721 |z (OCoLC)311118041 |z (OCoLC)646782973 |z (OCoLC)961887714 |z (OCoLC)988638736 |z (OCoLC)999539726 |z (OCoLC)1065698792 | ||
| 050 | 4 | |a QC611.6.M64 |b M644 1995eb | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/2 |2 22 |
| 245 | 0 | 0 | |a Molecular beam epitaxy : |b applications to key materials / |c edited by Robin F.C. Farrow. |
| 260 | |a Park Ridge, N.J. : |b Noyes Publications, |c �1995. | ||
| 300 | |a 1 online resource (xx, 772 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science and process technology series. Electronic materials and process technology | |
| 520 | |a In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a The Technology and Design of Molecular Beam Epitaxy Systems -- Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs -- Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties -- Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures -- Elemental Semiconductor Heterostructure�sGrowth, Properties, and Applications -- MBE Growth of High Tc Superconductors -- MBE Growth of Artificially-Layered Magnetic Metal Structures -- Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy -- Acknowledgments -- Appendix: Two-Level Diffraction -- References -- Index. | |
| 650 | 0 | |a Molecular beam epitaxy. | |
| 650 | 6 | |a �Epitaxie par jets mol�eculaires. |0 (CaQQLa)201-0282349 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Molecular beam epitaxy |2 fast |0 (OCoLC)fst01024729 | |
| 650 | 1 | 7 | |a Moleculaire-bundelepitaxie. |2 gtt |
| 700 | 1 | |a Farrow, R. F. C. | |
| 776 | 0 | 8 | |i Print version: |t Molecular beam epitaxy. |d Park Ridge, N.J. : Noyes Publications, �1995 |z 0815513712 |w (DLC) 94031247 |w (OCoLC)31078964 |
| 830 | 0 | |a Materials science and process technology series. |p Electronic materials and process technology. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780815513711 |z Texto completo |