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Wide bandgap semiconductors for power electronics materials, devices, applications /

Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Wellmann, Peter (Editor ), Ohtani, Noboru (Editor ), Rupp, R. (Roland) (Editor )
Formato: eBook
Idioma:Inglés
Publicado: Weinheim : Wiley-VCH, 2021.
Temas:
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Tabla de Contenidos:
  • Introduction; ; PART I. SILICON CARBIDE (SiC); Bulk Growth of hex-SiC; Industrial Perspectives on hex-SiC Bulk Growth; CVD Epitaxy of hex-SiC; Industrial Perspective on CVD Epitaxy of hex-SiC; Bulk and Epitaxial Growth of c-SiC; Intrinsic Defects in SiC; Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques; Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy; Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC; MOS Gate Oxide Interface Defects in SiC; SiC-Graphene Interfaces; Device Processing Using c-SiC and hex-SiC; Unipolar SiC Devices; Bipolar SiC Devices; Reliability of SiC Devices; Industrial Systems Using SiC Circuits; Hybrid Electric Vehicles and Electric Vehicles Applications of SiC; Novel Applications of SiC in Quantum Information; ; PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3; Ammonothermal and HVPE Bulk Growth of GaN; GaN on Si; HPSG and CVD Growth of Diamond; Diamond Epitaxy and Device Processing; Epitaxial Growth of Beta-Ga2O3;