Gallium nitride (GaN) : physics, devices, and technology /

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Medjdoub, Farid (Editor ), Iniewski, Krzytsztof (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boca Raton : CRC Press, 2015.
Colección:Devices, circuits, and systems.
Temas:
Gallium nitride.
Electronics > Research.
Nitrure de gallium.
TECHNOLOGY & ENGINEERING > Mechanical.
Electronics > Research
Gallium nitride
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Tabla de Contenidos:
  • Chapter 1. GaN high-voltage power devices / Joachim Würfl
  • chapter 2. AlGaN/GaN High-electron-mobility transistors grown by ammonia source molecular beam epitaxy / Yvon Cordier
  • chapter 3. Gallium nitride transistors on large-diameter Si(111) substrate / Subramaniam Arulkumaran and Geok Ing Ng
  • chapter 4. GaN-HEMT scaling technologies for high-frequency radio frequency and mixed signal applications / Keisuke Shinohara
  • chapter 5. Group III-nitride microwave monolithically integrated circuits / Rüdiger Quay
  • chapter 6. GaN-based metal/insulator/semiconductor-type Schottky hydrogen sensors / Ching-Ting Lee, Hsin-Ying Lee, and Li-Ren Lou
  • chapter 7. InGaN-based solar cells / Ezgi Dogmus and Farid Medjdoub
  • chapter 8. III-nitride semiconductors : new infrared intersubband technologies / Mark Beeler and Eva Monroy
  • chapter 9. Gallium nitride-based interband tunnel junctions / Siddharth Rajan, Sriram Krishnamoorthy, and Fatih Akyol
  • chapter 10. Trapping and degradation mechanisms in GaN-based HEMTs / Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni.

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