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Nanoelectronic Devices.
Annotation
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore : Abingdon :
Pan Stanford Publishing Taylor & Francis Group [distributor]
Feb. 2012
|
| Colección: | Pan Stanford textbook series on nanotechnology ;
v. 1. |
| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 100 | 1 | |a Park, Byung-Gook, |e author. | |
| 245 | 1 | 0 | |a Nanoelectronic Devices. |
| 260 | |a Singapore : |b Pan Stanford Publishing |c Feb. 2012 |a Abingdon : |b Taylor & Francis Group [distributor] | ||
| 300 | |a 1 online resource (400 pages) |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Pan Stanford textbook series on nanotechnology ; |v volume 1 | |
| 520 | 8 | |a Annotation |b This book provides readers with the knowledge in fundamentals of nanoelectronic devices. The authors build the principles of nanoelectronic devices based on those of microelectronic devices wherever possible and introduce the inherently nanoelectronic principles gradually. They briefly review quantum mechanics and solid-state physics that can form the basis of semiconductor device physics. The book also covers the basics of electron transport and p-n junctions, develops the operations of MOS capacitors and MOSFETs, and introduces some basic CMOS circuits. The last chapter is devoted to the nano-biotechnology application of field-effect transistors. | |
| 505 | 0 | |a Front Cover; Contents; Preface; 1. Quantum Mechanics for Nanoelectronic Devices; 2. Electron Transport and Device Physics; 3. MOS Structure and CMOS Devices; 4. Quantum Well Devices; 5. Quantum Wire Devices; 6. Quantum Dot Devices; 7. MOSFET as a Molecular Sensor; Appendix I: Physical Constants; Appendix II: Dirac Delta Function; Appendix III: Gamma Function; Appendix IV: Effective Mass Matrix; Appendix V: Density-Of-States (DOS) and Conductivity Effective Masses. | |
| 504 | |a Includes bibliographical references and index. | ||
| 506 | 1 | |a Legal Deposit; |c Only available on premises controlled by the deposit library and to one user at any one time; |e The Legal Deposit Libraries (Non-Print Works) Regulations (UK). |5 WlAbNL | |
| 540 | |a Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force. |5 WlAbNL | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Nanotechnology. | |
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 0 | |a Molecular electronics. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 6 | |a Électronique moléculaire. | |
| 650 | 6 | |a Nanotechnologie. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x General. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Nanotechnology & MEMS. |2 bisacsh | |
| 650 | 7 | |a Molecular electronics |2 fast | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 650 | 7 | |a Nanotechnology |2 fast | |
| 700 | 1 | |a Hwang, Sung Woo, |e author. | |
| 700 | 1 | |a Park, Young June, |e author. | |
| 776 | 0 | 8 | |i Print version: |a Park, Byung-Gook. |t Nanoelectronic Devices. |d Hoboken : Pan Stanford, ©2012 |z 9789814364003 |
| 830 | 0 | |a Pan Stanford textbook series on nanotechnology ; |v v. 1. | |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9789814364010/?ar |z Texto completo (Requiere registro previo con correo institucional) |
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