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Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements /
Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
Academic Press,
2014.
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| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 100 | 1 | |a Radamson, Henry H., |e author. | |
| 245 | 1 | 0 | |a Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements / |c Henry Radamson, Lars Thylen. |
| 264 | 1 | |a Amsterdam : |b Academic Press, |c 2014. | |
| 300 | |a 1 online resource (1 volume) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a CIP data; item not viewed. | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a Front Cover; Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements; Copyright Page; Contents; Acknowledgments; Introduction: Scope and Purpose of Book; 1 Metal Oxide Semiconductor Field Effect Transistors; Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors; Surface Space-Charge Regions in MOSFETs; Leakage Components in MOSFETs; Subthreshold Current; Gate-Oxide Leakage; S/D Junction Leakage; MOS Capacitors; Static Characterization of MOSFETs; Transfer from 2D to 3D Nanoscaled Transistors; Gate Integration in FinFETs. | |
| 505 | 8 | |a Parasitic Sources in MOSFET StructureLithography of Nanoscaled MOSFETs; Sidewall Transfer Lithography; Part Two: Strain Engineering in Group IV Materials; Strain Design for MOSFETs; Strain Effect on Carrier Mobility; Basic Definitions; Carrier Mobility in MOSFETs with Strained Si Channel; Strain and Critical Thickness; Global Critical Thickness of SiGe Layers; Critical Thickness of SiGe Layers on Patterned Substrates; Critical Thickness of SiGe Layers Grown on Nano Features; Strain Measurements and Applications; Strain Measurement; Raman Spectroscopy; TEM Analysis. | |
| 505 | 8 | |a High-Resolution X-Ray AnalysisPart Three: Chemical Vapor Deposition of Group IV Materials; Selective and Nonselective Epitaxy; Part Four: Improvement of the Channel Mobility; Effect of Recess Shape in S/D; Channel Materials and Mobility; III-V Materials; Graphene Material; Silicene, Germanene, and Other Similar 2D Materials; Germanium Material; References; 2 Basics of Integrated Photonics; General; Buried Channel Waveguide; Strip-Loaded Waveguide; Ridge Waveguide; Rib Waveguide; Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices; Lasers; Basics Of Photonic Detectors. | |
| 505 | 8 | |a Detector CharacteristicsResponsivity; Dark Current; Noise Characteristics of Photodetectors; Modulators: Principles and Mechanisms of Optical Modulation; Photonics Switches: Spatial Routing of High-Speed Data Streams; Switches; Devices for Wavelength Division Multiplexed Systems; Devices Based on Spectrally Dependent Interference Effects; References; 3 Silicon and Group IV Photonics; Part One: Silicon Photonics Elements for Integrated Photonics; General Properties; Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices. | |
| 505 | 8 | |a Silicon Electro-Optic ModulatorsWavelength Selective Devices in Silicon; The Ring Resonator; Part Two: Bandgap Engineering in Group IV Materials for Photonic Application; Part Three: Group IV Photodetectors; Integration of Photodiodes with Waveguide or MOSFETs; PhotoMOSFETs; Group IV-Based Lasers; Part Four: Graphene, New Photonic Material; Photodetectors; References; 4 Moore's Law for Photonics and Electronics; Downscaling of CMOS; Evolution of Logic CMOS Since 1970; Prior to NTRS and ITRS Roadmaps; After NRTS and ITRS; Future of Logic CMOS and Beyond CMOS; Transistor Physical Parameters. | |
| 520 | |a Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p. | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 0 | |a Nanophotonics. | |
| 650 | 0 | |a Group 14 elements. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 6 | |a Nanophotonique. | |
| 650 | 6 | |a Éléments du groupe 14. | |
| 650 | 7 | |a Group 14 elements |2 fast | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 650 | 7 | |a Nanophotonics |2 fast | |
| 700 | 1 | |a Thylén, Lars, |e author. | |
| 776 | 0 | 8 | |i Print version |z 9780124199750 |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9780124199750/?ar |z Texto completo (Requiere registro previo con correo institucional) |
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