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Advances in Non-volatile Memory and Storage Technology.
Non-volatile memory retains its data when the power supply is removed and is thus invaluable for data storage. However, new solutions are needed for future development because solid-state non-volatile memory (flash), while useful, is limited. This book presents a systematic overview of the emerging...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Woodhead Publishing,
2014.
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| Colección: | Woodhead Publishing series in electronic and optical materials ;
no. 64. |
| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
Tabla de Contenidos:
- Cover; Advances in Non-volatile Memory and Storage Technology; Copyright; Contents; Contributor contact details; Woodhead Publishing Series in Electronic and Optical Materials; 1:Overview of nonvolatile memory technology: markets, technologies and trends; 1.1 Introduction; 1.2 The nonvolatile memory (NVM) market and applications; 1.3 Developments in charge storage memory technology; 1.4 Alternative memory storage concepts; 1.5 Beyond evolutionary architecture scaling; 1.6 Future trends; 1.7 References; Part I:Improvements in Flash technologies; 2:Developments in 3D-NAND Flash technology.
- 2.1 Introduction2.2 2D-NAND Flash memory: limitations in scaling; 2.3 3D-NAND Flash memory with vertical channels; 2.4 3D-NAND Flash memory with horizontal channels; 2.5 Performance and electrical characteristics of different 3D-NAND Flash memory designs; 2.6 Conclusion; 2.7 References; 3:Multibit NAND Flash memories for ultra high density storage devices; 3.1 Introduction; 3.2 Array architectures; 3.3 Read techniques; 3.4 Program and erase algorithms; 3.5 Reliability issues in NAND Flash memory technologies; 3.6 Monolithic 3D integration; 3.7 Conclusion and future trends; 3.8 References.
- 4: Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered chargetrapping layers and splitgate memory architectures4.1 Introduction; 4.2 Silicon nanocrystals; 4.3 Metal nanocrystals; 4.4 Charge trap memories; 4.5 Splitgate charge trap memories; 4.6 Conclusion; 4.7 References; Part II:Phase change memory (PCM) and resistive random access memory (RRAM) technologies; 5:Phase change memory (PCM) materials and devices; 5.1 Introduction; 5.2 Phase change materials: structure and crystallization kinetics; 5.3 Properties of phase change materials.
- 5.4 Phase change memory (PCM): principles and modeling5.5 PCM device design and engineering; 5.6 Conclusion and future trends; 5.7 References; 6:Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques; 6.1 Introduction; 6.2 Strategies for improving the PCM performance; 6.3 The use of nanowires; 6.4 Fabrication of phase change nanowires (PC-NWs): topdown approaches; 6.5 Fabrication of phase change nanowires (PC-NWs): bottomup approaches; 6.6 Fabrication of phase change nanowires (PC-NWs): other techniques; 6.7 Characterization of PC-NWs.
- 6.8 Conclusion6.9 Sources of further information and advice; 6.10 References; 7:Nanowire phase change memory (PCM) technologies: properties and performance; 7.1 Introduction; 7.2 Melting temperature and crystallization kinetics; 7.3 Phase transition mechanisms; 7.4 Thermal properties; 7.5 Electrical properties; 7.6 Properties of coreshell structures; 7.7 Conclusion; 7.8 Acknowledgement; 7.9 Sources of further information and advice; 7.10 References; 8:Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures; 8.1 Introduction.