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Nanoscale semiconductor memories : technology and applications /
The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or f...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boca Raton, FL :
CRC Press,
©2014.
|
| Colección: | Devices, circuits, and systems.
|
| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 003 | OCoLC | ||
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| 245 | 0 | 0 | |a Nanoscale semiconductor memories : |b technology and applications / |c edited by Santosh K. Kurinec, Krzysztof Iniewski. |
| 260 | |a Boca Raton, FL : |b CRC Press, |c ©2014. | ||
| 300 | |a 1 online resource (xx, 418 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Devices, circuits, and systems | |
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a Front Cover; Contents; Preface; Editors; Contributors; Chapter 1: SRAM: The Benchmark of VLSI Technology; Chapter 2: Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies; Chapter 3: Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation; Chapter 4: DRAM Technology; Chapter 5: Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI; Chapter 6: A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Node and Beyond; Chapter 7: Quantum Dot-Based Flash Memories; Chapter 8: Spin-Transfer-Torque MRAM | |
| 505 | 8 | |a Chapter 9: Magnetic Domain Wall "Racetrack" MemoryChapter 10: Phase-Change Memory Cell Model and Simulation; Chapter 11: Phase-Change Memory Devices and Electrothermal Modeling; Chapter 12: Nonvolatile Memory Device: Resistive Random Access Memory; Chapter 13: Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits; Back Cover | |
| 520 | |a The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. This way the book has a widespread appeal, including practicing engineers, academicians, research scientists, and senior graduate students. Nanoscale memories today have a widespread application range. | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Semiconductor storage devices. | |
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 6 | |a Ordinateurs |x Mémoires à semi-conducteurs. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 7 | |a Nanoelectronics. |2 fast |0 (OCoLC)fst01741867 | |
| 650 | 7 | |a Semiconductor storage devices. |2 fast |0 (OCoLC)fst01112182 | |
| 700 | 1 | |a Kurinec, Santosh K. | |
| 700 | 1 | |a Iniewski, Krzysztof, |d 1960- | |
| 776 | 0 | 8 | |t Nanoscale semiconductor memories. |d Boca Raton : Taylor & Francis, 2013 |z 9781466560604 |w (DLC) 2013045723 |w (OCoLC)785869259 |
| 830 | 0 | |a Devices, circuits, and systems. | |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9781466560611/?ar |z Texto completo (Requiere registro previo con correo institucional) |
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