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|a Semiconductor x-ray detectors /
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|a Boca Raton, FL :
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|a Chapter 1. Introduction -- chapter 2. Detector response function -- chapter 3. Detector artefacts -- chapter 4. Contacts -- chapter 5. Si(Li) x-ray detectors -- chapter 6. HPSi and HPGe x-ray detectors -- chapter 7. X-ray detectors based on silicon lithography and planar technology -- chapter 8. CCD-based x-ray detectors -- chapter 9. Silicon drift x-ray detectors -- chapter 10. Wide bandgap semiconductors -- chapter 11. History of semiconductor x-ray detectors and their applications.
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|a Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SD.
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|a Semiconductors.
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|a Sareen, R. A.,
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|i Print version:
|a Lowe, B.G.
|t Semiconductor X-Ray Detectors.
|d Hoboken : Taylor and Francis, ©2013
|z 9781466554009
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|a Sensors series.
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