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Technology computer aided design : simulation for VLSI MOSFET /
"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
CRC Press,
©2013.
|
| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 050 | 4 | |a TK7874.75 |b .T43 2013eb | |
| 072 | 7 | |a COM |x 036000 |2 bisacsh | |
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| 245 | 0 | 0 | |a Technology computer aided design : |b simulation for VLSI MOSFET / |c edited by Chandan Kumar Sarkar. |
| 260 | |a Boca Raton : |b CRC Press, |c ©2013. | ||
| 300 | |a 1 online resource (xv, 409 pages, 15 unnumbered pages of plates) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- |c Provided by publisher | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a 1. Introduction to technology computer aided design / Samar K. Saha -- 2. Basic semiconductor and Metal-Oxide-Semiconductor (MOS) physics / Swapnadip De -- 3. Review of numerical methods for Technology Computer Aided Design (TCAD) / Kalyan Koley -- 4. Device simulation using ISE-TCAD / N. Mohankumar -- 5. Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs through TCAD / Srabanti Pandit -- 7. MOSFET characterization for VLSI circuit simulation / Soumya Pandit -- 8. Process simulation of a MOSFET using TSUPREM-4 and medici / Atanu Kundu. | |
| 546 | |a English. | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration |x Computer-aided design. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Computer-aided design. | |
| 650 | 6 | |a Circuits intégrés à très grande échelle |x Conception assistée par ordinateur. | |
| 650 | 6 | |a Transistors MOSFET |x Conception assistée par ordinateur. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Microelectronics. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x General. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Material Science. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Logic Design. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x Logic. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x VLSI & ULSI. |2 bisacsh | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |x Computer-aided design. |2 fast |0 (OCoLC)fst00975604 | |
| 700 | 1 | |a Sarkar, Chandan Kumar, |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Technology computer aided design. |d Boca Raton : Taylor & Francis 2013 |z 9781466512658 |w (DLC) 2013008022 |w (OCoLC)767570525 |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9781466512665/?ar |z Texto completo (Requiere registro previo con correo institucional) |
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