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Semiconductor laser engineering, reliability and diagnostics : a practical approach to high power and single mode devices /
"This reference book provides a fully integrated novel approach to the development of high power, single transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering (Part 1), reliability engineering (Part 2) and device diagnostics (Part 3) in the sam...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Chichester, West Sussex, U.K. :
John Wiley & Sons Inc.,
2013.
|
| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 100 | 1 | |a Epperlein, Peter W. | |
| 245 | 1 | 0 | |a Semiconductor laser engineering, reliability and diagnostics : |b a practical approach to high power and single mode devices / |c Peter W. Epperlein. |
| 260 | |a Chichester, West Sussex, U.K. : |b John Wiley & Sons Inc., |c 2013. | ||
| 300 | |a 1 online resource (xxiv, 496 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a "This reference book provides a fully integrated novel approach to the development of high power, single transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering (Part 1), reliability engineering (Part 2) and device diagnostics (Part 3) in the same book in altogether nine comprehensive chapters, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to address for effective remedies and enhanced optical strength. The discussion covers also stability criteria of critical laser characteristics and key laser robustness factors. Clear design considerations are discussed in the context of reliability engineering concepts and models, along with typical programs for reliability tests and laser product qualifications. A final extended part of novel, advanced diagnostic methods covers in detail, for the first time in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: Furnishes comprehensive practical design guidelines by considering also reliability related effects and key laser robustness factors, and discusses basic laser fabrication and packaging issues. Discusses in detail diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application. Provides a systematic insight into laser degradation modes such as catastrophic optical damage, and covers a wide range of technologies to increase the optical strength of diode lasers. Discusses basic concepts and techniques of laser reliability engineering, and provides for the first time in a book details on a standard commercial program for testing the reliabity of high power diode laser. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of highly reliable devices. It features two hundred figures and tables illustrating numerous aspects of diode laser engineering, fabrication, packaging, reliability, performance, diagnostics and applications, and an extensive list of references to all addressed technical topics at the end of each chapter. With invaluable practical advice, this novel reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students."-- |c Provided by publisher. | ||
| 505 | 0 | |6 880-01 |a Semiconductor Laser Engineering, Reliability and Diagnostics; Contents; Preface; About the author; PART 1 DIODE LASER ENGINEERING; Overview; 1 Basic diode laser engineering principles; Introduction; 1.1 Brief recapitulation; 1.1.1 Key features of a diode laser; 1.1.1.1 Carrier population inversion; 1.1.1.2 Net gain mechanism; 1.1.1.3 Optical resonator; 1.1.1.4 Transverse vertical confinement; 1.1.1.5 Transverse lateral confinement; 1.1.2 Homojunction diode laser; 1.1.3 Double-heterostructure diode laser; 1.1.4 Quantum well diode laser. | |
| 505 | 8 | |a 1.1.4.1 Advantages of quantum well heterostructures for diode lasersWavelength adjustment and tunability; Strained quantum well lasers; Optical power supply; Temperature characteristics; 1.1.5 Common compounds for semiconductor lasers; 1.2 Optical output power -- diverse aspects; 1.2.1 Approaches to high-power diode lasers; 1.2.1.1 Edge-emitters; 1.2.1.2 Surface-emitters; 1.2.2 High optical power considerations; 1.2.2.1 Laser brightness; 1.2.2.2 Laser beam quality factor M2; 1.2.3 Power limitations; 1.2.3.1 Kinks; 1.2.3.2 Rollover; 1.2.3.3 Catastrophic optical damage; 1.2.3.4 Aging. | |
| 505 | 8 | |a 1.3.4.3 Cavity length dependence1.3.4.4 Active layer thickness dependence; 1.3.5 Transverse vertical and transverse lateral modes; 1.3.5.1 Vertical confinement structures -- summary; Double-heterostructure; Single quantum well; Strained quantum well; Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH); Multiple quantum well (MQW); 1.3.5.2 Lateral confinement structures; Gain-guiding concept and key features; Weakly index-guiding concept and key features; Strongly index-guiding concept and key features; 1.3.5.3 Near-field and far-field pattern. | |
| 505 | 8 | |a 1.3.6 Fabry-Pérot longitudinal modes1.3.7 Operating characteristics; 1.3.7.1 Optical output power and efficiency; 1.3.7.2 Internal efficiency and optical loss measurements; 1.3.7.3 Temperature dependence of laser characteristics; 1.3.8 Mirror reflectivity modifications; 1.4 Laser fabrication technology; 1.4.1 Laser wafer growth; 1.4.1.1 Substrate specifications and preparation; 1.4.1.2 Substrate loading; 1.4.1.3 Growth; 1.4.2 Laser wafer processing; 1.4.2.1 Ridge waveguide etching and embedding; 1.4.2.2 The p-type electrode; 1.4.2.3 Ridge waveguide protection. | |
| 546 | |a English. | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Semiconductor lasers. | |
| 650 | 2 | |a Lasers, Semiconductor | |
| 650 | 6 | |a Lasers à semi-conducteurs. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Lasers & Photonics. |2 bisacsh | |
| 650 | 7 | |a Semiconductor lasers |2 fast | |
| 653 | |a HALBLEITERLASER + LASERDIODEN (LASERTECHNIK) | ||
| 653 | |a HOCHLEISTUNGSLASER + HOCHENERGIELASER (LASERTECHNIK) | ||
| 653 | |a HALBLEITERMATERIALIEN (ELEKTROTECHNIK) | ||
| 653 | |a LASERBAUTEILE + MASERBAUTEILE (ELEKTROTECHNIK) | ||
| 653 | |a SEMICONDUCTOR LASERS + LASER DIODES (LASER ENGINEERING) | ||
| 653 | |a LASER À SEMICONDUCTEUR + DIODES LASER (TECHNIQUE DES LASERS) | ||
| 653 | |a HIGH POWERED LASERS + HIGH ENERGY LASERS (LASER ENGINEERING) | ||
| 653 | |a LASER DE PUISSANCE + LASER HAUTE ÉNERGIE (TECHNIQUE DES LASERS) | ||
| 653 | |a MATÉRIAUX SEMICONDUCTEURS (ÉLECTROTECHNIQUE) | ||
| 653 | |a SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING) | ||
| 653 | |a ÉLÉMENTS DE LASER + ÉLÉMENTS DE MASER (ÉLECTROTECHNIQUE) | ||
| 653 | |a MASER COMPONENTS + LASER COMPONENTS (ELECTRICAL ENGINEERING) | ||
| 776 | 0 | 8 | |i Print version: |z 9781119990338 |w (OCoLC)842314265 |
| 856 | 4 | 0 | |u https://learning.oreilly.com/library/view/~/9781118481868/?ar |z Texto completo (Requiere registro previo con correo institucional) |
| 880 | 0 | 0 | |6 505-01/(S |g Machine generated contents note: |g pt. 1 |t DIODE LASER ENGINEERING -- |t Overview -- |g 1. |t Basic diode laser engineering principles -- |t Introduction -- |g 1.1. |t Brief recapitulation -- |g 1.1.1. |t Key features of a diode laser -- |g 1.1.1.1. |t Carrier population inversion -- |g 1.1.1.2. |t Net gain mechanism -- |g 1.1.1.3. |t Optical resonator -- |g 1.1.1.4. |t Transverse vertical confinement -- |g 1.1.1.5. |t Transverse lateral confinement -- |g 1.1.2. |t Homojunction diode laser -- |g 1.1.3. |t Double-heterostructure diode laser -- |g 1.1.4. |t Quantum well diode laser -- |g 1.1.4.1. |t Advantages of quantum well heterostructures for diode lasers -- |t Wavelength adjustment and tunability -- |t Strained quantum well lasers -- |t Optical power supply -- |t Temperature characteristics -- |g 1.1.5. |t Common compounds for semiconductor lasers -- |g 1.2. |t Optical output power -- diverse aspects -- |g 1.2.1. |t Approaches to high-power diode lasers -- |g 1.2.1.1. |t Edge-emitters -- |g 1.2.1.2. |t Surface-emitters -- |g 1.2.2. |t High optical power considerations -- |g 1.2.2.1. |t Laser brightness -- |g 1.2.2.2. |t Laser beam quality factor M2 -- |g 1.2.3. |t Power limitations -- |g 1.2.3.1. |t Kinks -- |g 1.2.3.2. |t Rollover -- |g 1.2.3.3. |t Catastrophic optical damage -- |g 1.2.3.4. |t Aging -- |g 1.2.4. |t High power versus reliability tradeoffs -- |g 1.2.5. |t Typical and record-high cw optical output powers -- |g 1.2.5.1. |t Narrow-stripe, single spatial mode lasers -- |g 1.2.5.2. |t Standard 100 μm wide aperture single emitters -- |g 1.2.5.3. |t Tapered amplifier lasers -- |g 1.2.5.4. |t Standard 1 cm diode laser bar arrays -- |g 1.3. |t Selected relevant basic diode laser characteristics -- |g 1.3.1. |t Threshold gain -- |g 1.3.2. |t Material gain spectra -- |g 1.3.2.1. |t Bulk double-heterostructure laser -- |g 1.3.2.2. |t Quantum well laser -- |g 1.3.3. |t Optical confinement -- |g 1.3.4. |t Threshold current -- |g 1.3.4.1. |t Double-heterostructure laser -- |g 1.3.4.2. |t Quantum well laser -- |g 1.3.4.3. |t Cavity length dependence -- |g 1.3.4.4. |t Active layer thickness dependence -- |g 1.3.5. |t Transverse vertical and transverse lateral modes -- |g 1.3.5.1. |t Vertical confinement structures -- summary -- |t Double-heterostructure -- |t Single quantum well -- |t Strained quantum well -- |t Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH) -- |t Multiple quantum well (MQW) -- |g 1.3.5.2. |t Lateral confinement structures -- |t Gain-guiding concept and key features -- |t Weakly index-guiding concept and key features -- |t Strongly index-guiding concept and key features -- |g 1.3.5.3. |t Near-field and far-field pattern -- |g 1.3.6. |t Fabry-Perot longitudinal modes -- |g 1.3.7. |t Operating characteristics -- |g 1.3.7.1. |t Optical output power and efficiency -- |g 1.3.7.2. |t Internal efficiency and optical loss measurements -- |g 1.3.7.3. |t Temperature dependence of laser characteristics -- |g 1.3.8. |t Mirror reflectivity modifications -- |g 1.4. |t Laser fabrication technology -- |g 1.4.1. |t Laser wafer growth -- |g 1.4.1.1. |t Substrate specifications and preparation -- |g 1.4.1.2. |t Substrate loading -- |g 1.4.1.3. |t Growth -- |g 1.4.2. |t Laser wafer processing -- |g 1.4.2.1. |t Ridge waveguide etching and embedding -- |g 1.4.2.2. |t p-type electrode -- |g 1.4.2.3. |t Ridge waveguide protection -- |g 1.4.2.4. |t Wafer thinning and the n-type electrode -- |g 1.4.2.5. |t Wafer cleaving; facet passivation and coating; laser optical inspection; and electrical testing -- |g 1.4.3. |t Laser packaging -- |g 1.4.3.1. |t Package formats -- |g 1.4.3.2. |t Device bonding -- |g 1.4.3.3. |t Optical power coupling -- |g 1.4.3.4. |t Device operating temperature control -- |g 1.4.3.5. |t Hermetic sealing -- |t References -- |g 2. |t Design considerations for high-power single spatial mode operation -- |t Introduction -- |g 2.1. |t Basic high-power design approaches -- |g 2.1.1. |t Key aspects -- |g 2.1.2. |t Output power scaling -- |g 2.1.3. |t Transverse vertical waveguides -- |g 2.1.3.1. |t Substrate -- |g 2.1.3.2. |t Layer sequence -- |g 2.1.3.3. |t Materials; layer doping; graded-index layer doping -- |t Materials -- |t Layer doping -- |t Layer doping -- n-type doping -- |t Layer doping -- p-type doping -- |t Graded-index layer doping -- |g 2.1.3.4. |t Active layer -- |t Integrity --- spacer layers -- |t Integrity -- prelayers -- |t Integrity -- deep levels -- |t Quantum wells versus quantum dots -- |t Number of quantum wells -- |g 2.1.3.5. |t Fast-axis beam divergence engineering -- |t Thin waveguides -- |t Broad waveguides and decoupled confinement heterostructures -- |t Low refractive index mode puller layers -- |t Optical traps and asymmetric waveguide structures -- |t Spread index or passive waveguides -- |t Leaky waveguides -- |t Spot-size conveners -- |t Photonic bandgap crystal -- |g 2.1.3.6. |t Stability of the fundamental transverse vertical mode -- |g 2.1.4. |t Narrow-stripe weakly index-guided transverse lateral waveguides -- |g 2.1.4.1. |t Ridge waveguide -- |g 2.1.4.2. |t Quantum well intermixing -- |g 2.1.4.3. |t Weakly index-guided buried stripe -- |g 2.1.4.4. |t Slab-coupled waveguide -- |g 2.1.4.5. |t Anti-resonant reflecting optical waveguide -- |g 2.1.4.6. |t Stability of the fundamental transverse lateral mode -- |g 2.1.5. |t Thermal management -- |g 2.1.6. |t Catastrophic optical damage elimination -- |g 2.2. |t Single spatial mode and kink control -- |g 2.2.1. |t Key aspects -- |g 2.2.1.1. |t Single spatial mode conditions -- |g 2.2.1.2. |t Fundamental mode waveguide optimizations -- |t Waveguide geometry; internal physical mechanisms -- |t Figures of merit -- |t Transverse vertical mode expansion; mirror reflectivity; laser length -- |g 2.2.1.3. |t Higher order lateral mode suppression by selective losses -- |t Absorptive metal layers -- |t Highly resistive regions -- |g 2.2.1.4. |t Higher order lateral mode filtering schemes -- |t Curved waveguides -- |t Tilted mirrors -- |g 2.2.1.5. |t Beam steering and cavity length dependence of kinks -- |t Beam-steering kinks -- |t Kink versus cavity length dependence -- |g 2.2.1.6. |t Suppression of the filamentation effect -- |g 2.3. |t High-power, single spatial mode, narrow ridge waveguide lasers -- |g 2.3.1. |t Introduction -- |g 2.3.2. |t Selected calculated parameter dependencies -- |g 2.3.2.1. |t Fundamental spatial mode stability regime -- |g 2.3.2.2. |t Slow-axis mode losses -- |g 2.3.2.3. |t Slow-axis near-field spot size -- |g 2.3.2.4. |t Slow-axis far-field angle -- |g 2.3.2.5. |t Transverse lateral index step -- |g 2.3.2.6. |t Fast-axis near-field spot size -- |g 2.3.2.7. |t Fast-axis far-field angle -- |g 2.3.2.8. |t Internal optical loss -- |g 2.3.3. |t Selected experimental parameter dependencies -- |g 2.3.3.1. |t Threshold current density versus cladding layer composition -- |g 2.3.3.2. |t Slope efficiency versus cladding layer composition -- |g 2.3.3.3. |t Slope efficiency versus threshold current density -- |g 2.3.3.4. |t Threshold current versus slow-axis far-field angle -- |g 2.3.3.5. |t Slope efficiency versus slow-axis far-field angle -- |g 2.3.3.6. |t Kink-free power versus residual thickness -- |g 2.4. |t Selected large-area laser concepts and techniques -- |g 2.4.1. |t Introduction -- |g 2.4.2. |t Broad-area (BA) lasers -- |g 2.4.2.1. |t Introduction -- |g 2.4.2.2. |t BA lasers with tailored gain profiles -- |g 2.4.2.3. |t BA lasers with Gaussian reflectivity facets -- |g 2.4.2.4. |t BA lasers with lateral grating-confined angled waveguides -- |g 2.4.3. |t Unstable resonator (UR) lasers -- |g 2.4.3.1. |t Introduction -- |g 2.4.3.2. |t Curved-mirror UR lasers -- |g 2.4.3.3. |t UR lasers with continuous lateral index variation -- |g 2.4.3.4. |t Quasi-continuous unstable regrown-lens-train resonator lasers -- |g 2.4.4. |t Tapered amplifier lasers -- |g 2.4.4.1. |t Introduction -- |g 2.4.4.2. |t Tapered lasers -- |g 2.4.4.3. |t Monolithic master oscillator power amplifiers -- |g 2.4.5. |t Linear laser array structures -- |g 2.4.5.1. |t Introduction -- |g 2.4.5.2. |t Phase-locked coherent linear laser arrays -- |g 2.4.5.3. |t High-power incoherent standard 1 cm laser bars -- |t References -- |g pt. |
| 880 | 0 | 0 | |t 2 |t DIODE LASER RELIABILITY -- |t Overview -- |g 3. |t Basic diode laser degradation modes -- |t Introduction -- |g 3.1. |t Degradation and stability criteria of critical diode laser characteristics -- |g 3.1.1. |t Optical power; threshold; efficiency; and transverse modes -- |g 3.1.1.1. |t Active region degradation -- |g 3.1.1.2. |t Mirror facet degradation -- |g 3.1.1.3. |t Lateral confinement degradation -- |g 3.1.1.4. |t Ohmic contact degradation -- |g 3.1.2. |t Lasing wavelength and longitudinal modes -- |g 3.2. |t Classification of degradation modes -- |g 3.2.1. |t Classification of degradation phenomena by location -- |g 3.2.1.1. |t External degradation -- |t Mirror degradation -- |t Contact degradation -- |t Solder degradation -- |g 3.2.1.2. |t Internal degradation -- |t Active region degradation and junction degradation -- |g 3.2.2. |t Basic degradation mechanisms -- |g 3.2.2.1. |t Rapid degradation -- |t Features and causes of rapid degradation -- |t Elimination of rapid degradation -- |g 3.2.2.2. |t Gradual degradation -- |t Features and causes of gradual degradation -- |t Elimination of gradual degradation -- |g 3.2.2.3. |t Sudden degradation -- |t Features and causes of sudden degradation -- |t Elimination of sudden degradation -- |g 3.3. |t Key laser robustness factors -- |t References -- |g 4. |t Optical strength engineering -- |t Introduction -- |g 4.1. |t Mirror facet properties -- physical origins of failure -- |g 4.2. |t Mirror facet passivation and protection -- |g 4.2.1. |t Scope and effects -- |g 4.2.2. |t Facet passivation techniques -- |g 4.2.2.1. |t E2 process -- |g 4.2.2.2. |t Sulfide passivation -- |g 4.2.2.3. |t Reactive material process -- |g 4.2.2.4. |t N2IBE process -- |g 4.2.2.5. |t I-3 process -- |g 4.2.2.6. |t Pulsed UV laser-assisted techniques -- |g 4.2.2.7. |t Hydrogenation and silicon hydride barrier layer process -- |g 4.2.3. |t Facet protection techniques -- |g 4.3. |t Nonabsorbing mirror technologies -- |g 4.3.1. |t Concept -- |g 4.3.2. |t Window grown on facet -- |g 4.3.2.1. |t ZnSe window layer -- |g 4.3.2.2. |t AlGaInP window layer -- |g 4.3.2.3. |t AlGaAs window layer -- |g 4.3.2.4. |t EMOF process -- |g 4.3.2.5. |t Disordering ordered InGaP -- |g 4.3.3. |t Quantum well intermixing processes. |
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