Silicon technologies : ion implantation and thermal treatment /

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The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Baudrant, Annie
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London : Hoboken, NJ : ISTE ; Wiley, 2011.
Temas:
Semiconductor doping.
Ion implantation.
Semiconductors > Heat treatment.
Semi-conducteurs > Dopage.
Ions > Implantation.
Semi-conducteurs > Traitement thermique.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Ion implantation
Semiconductor doping
Semiconductors > Heat treatment
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)

MARC

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245 0 0 |a Silicon technologies :  |b ion implantation and thermal treatment /  |c edited by Annie Baudrant. 
260 |a London :  |b ISTE ;  |a Hoboken, NJ :  |b Wiley,  |c 2011. 
300 |a 1 online resource :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
500 |a Title from PDF title page (viewed on Feb. 28, 2013). 
504 |a Includes bibliographical references and index. 
520 |a The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion. 
505 0 |a Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case 
505 8 |a 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL 
505 8 |a 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory 
505 8 |a 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources 
590 |a O'Reilly  |b O'Reilly Online Learning: Academic/Public Library Edition 
650 0 |a Semiconductor doping. 
650 0 |a Ion implantation. 
650 0 |a Semiconductors  |x Heat treatment. 
650 6 |a Semi-conducteurs  |x Dopage. 
650 6 |a Ions  |x Implantation. 
650 6 |a Semi-conducteurs  |x Traitement thermique. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Semiconductors.  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Solid State.  |2 bisacsh 
650 7 |a Ion implantation  |2 fast 
650 7 |a Semiconductor doping  |2 fast 
650 7 |a Semiconductors  |x Heat treatment  |2 fast 
700 1 |a Baudrant, Annie. 
776 0 8 |i Print version:  |t Silicon technologies.  |d London : ISTE ; Hoboken, NJ : Wiley, 2011  |z 9781848212312  |w (DLC) 2011008131  |w (OCoLC)669751158 
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