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Ferroelectric dielectrics integrated on silicon /
This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emph...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London : Hoboken, NJ :
ISTE ; Wiley,
2011.
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| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 245 | 0 | 0 | |a Ferroelectric dielectrics integrated on silicon / |c edited by Emmanuel Defaÿ. |
| 260 | |a London : |b ISTE ; |a Hoboken, NJ : |b Wiley, |c 2011. | ||
| 300 | |a 1 online resource (xiv, 448 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 500 | |a Adapted and updated from: Dielectriques ferroelectriques integres sur silicium, published in France by Hermes Science/Lavoisier, 2011. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films. | ||
| 505 | 0 | |a Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. The Thermodynamic Approach; 1.1. Background; 1.2. The functions of state; 1.3. Linear equations, piezoelectricity; 1.4. Nonlinear equations, electrostriction; 1.5. Thermodynamic modeling of the ferroelectric-paraelectricphase transition; 1.5.1. Assumption on the elastic Gibbs energy; 1.5.2. Second-order transition; 1.5.3. Effect of stress; 1.5.4. First-order transition; 1.6. Conclusion; 1.7. Bibliography; Chapter 2. Stress Effect on Thin Films; 2.1. Introduction; 2.2. Modeling the system under consideration | |
| 505 | 8 | |a 2.3. Temperature-misfit strain phase diagrams for monodomain films2.3.1. Phase diagram construction from the Landau-Ginzburg-Devonshire theory; 2.3.2. Calculations limitations; 2.4. Domain stability map; 2.4.1. Presentation and description of the framework of study; 2.4.2. Main contributions to the total energy of a film; 2.4.3. Influence of thickness; 2.4.4. Macroscopic elastic energy for each type of tetragonal domain; 2.4.5. Indirect interaction energy; 2.4.6. Domain structures at equilibrium; 2.4.7. Domain stability map; 2.5. Temperature-misfit strain phase diagram for polydomain films | |
| 505 | 8 | |a 2.6. Discussion of the nature of the "misfit strain"2.6.1. Mechanical misfit strain; 2.6.2. Thermodynamic misfit strain; 2.6.3. As an illustration; 2.7. Conclusion; 2.8. Experimental validation of phase diagrams: state of the art; 2.9. Case study; 2.10. Results; 2.10.1. Evolution of the lattice parameters; 2.10.2. Associated stresses and strains; 2.11. Comparison between the experimental data and the temperature-misfit strain phase diagrams; 2.11.1. Thin film of PZT; 2.11.2. Thin layer of PbTiO3; 2.12. Conclusion; 2.13. Bibliography; Chapter 3. Deposition and Patterning Technologies | |
| 505 | 8 | |a 3.1. Deposition method3.1.1. Cathodic sputtering; 3.1.2. Ion beam sputtering; 3.1.3. Pulsed laser deposition; 3.1.4. The sol-gel process; 3.1.5. The MOCVD; 3.1.6. Molecular beam epitaxy; 3.2. Etching; 3.2.1. Wet etching; 3.2.2. Dry etching; 3.3. Contamination; 3.4. Monocrystalline thin-film transfer; 3.4.1. Smart CutTM technology; 3.4.2. Bonding/thinning; 3.4.3. Interest in the material in a thin layer; 3.4.4. State of the art of the domain/applications; 3.4.5. An exemplary implementation; 3.5. Design of experiments; 3.5.1. The assumptions; 3.5.2. Reproducibility | |
| 505 | 8 | |a 3.5.3. How can we reduce the number of experiments?3.5.4. A DOE example: PZT RF magnetron sputtering deposition; 3.6. Conclusion; 3.7. Bibliography; Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films; 4.1. Introduction; 4.2. Some reminders of X-ray diffraction and crystallography; 4.2.1. Nature of X-rays; 4.2.2. X-ray scattering and diffraction; 4.3. Application to powder or polycrystalline thin-films; 4.4. Phase analysis by X-ray diffraction; 4.4.1. Grazing incidence diffraction; 4.4.2. De-texturing; 4.4.3. Quantitative analysis | |
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Ferroelectric thin films. | |
| 650 | 0 | |a Silicon |x Electric properties. | |
| 650 | 0 | |a Electric batteries |x Corrosion. | |
| 650 | 6 | |a Couches minces ferroélectriques. | |
| 650 | 6 | |a Piles électriques |x Corrosion. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
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| 650 | 7 | |a Ferroelectric thin films. |2 fast |0 (OCoLC)fst00923116 | |
| 650 | 7 | |a Silicon |x Electric properties. |2 fast |0 (OCoLC)fst01118637 | |
| 700 | 1 | |a Defaÿ, Emmanuel. | |
| 776 | 0 | 8 | |i Print version: |t Ferroelectric dielectrics integrated on silicon. |d London : ISTE ; Hoboken, NJ : Wiley, 2011 |z 9781848213135 |w (DLC) 2011035048 |w (OCoLC)753633934 |
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