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Electromigration in thin films and electronic devices : materials and reliability /

Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area. Part on...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Kim, Choong-Un
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Oxford : Woodhead Pub., 2011.
Colección:Woodhead Publishing in materials.
Temas:
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)

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245 0 0 |a Electromigration in thin films and electronic devices :  |b materials and reliability /  |c edited by Choong-Un Kim. 
260 |a Oxford :  |b Woodhead Pub.,  |c 2011. 
300 |a 1 online resource (xii, 329 pages) :  |b illustrations. 
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504 |a Includes bibliographical references and index. 
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520 |a Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area. Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints. With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuitsComprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigrationDeals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. 
505 0 |a Part I. Introduction. Modeling electromigration phenomena / F. Cacho and X. Federspiel ; Modeling electromigratoin using the peridynamics approach / D.T. Read and V.K. Tewary and W.H. Gerstle ; Modeling, simulation and X-ray microbeam studies of electromigration / A.M. Maniatty, G.S. Cargill III, and H. Zhang -- Part II. Electromigration in copper interconnects. X-ray microbeam analysis of electromigration in copper inteerconnects / H. Zhang and G.S. Cargill III ; Voiding in copper interconnects during electromigration / C.L. Gan and M.K. Lim ; The evolution of microstructure in copper interconnects during electromigration / A.S> Budiman ; Scaling effects on electromigration reliability of copper interconnects / L. Zhang, J.W. Pyun, and P.S. Ho ; Electromigration failure in nanoscale copper interconnects / E.T. Ogawa -- Part III. Electromigration in solder. Electromigration-induced microstructural evolution in lead-free and lead-tin solders / K.-L. Lin ; Electromigration in flip-chip solder joints / D. Yang and Y.C. Chan and M. Pecht. 
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