Compact MOSFET models for VLSI design /

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concu...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Bhattacharyya, A. B. (Amalendu Bhushan)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; Hoboken, NJ : [Piscataway, NJ] : John Wiley & Sons (Asia) ; IEEE Press, ©2009.
Temas:
Integrated circuits > Very large scale integration > Design and construction.
Metal oxide semiconductor field-effect transistors > Design and construction.
TECHNOLOGY & ENGINEERING > Mechanical.
Integrated circuits > Very large scale integration > Design and construction
Metal oxide semiconductor field-effect transistors > Design and construction
VLSI
MOS-FET
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Tabla de Contenidos:
  • Semiconductor physics review for MOSFET modeling
  • Ideal metal oxide semiconductor capacitor
  • Non-ideal and non-classical MOS capacitors
  • Long channel MOS transistor
  • The scaled MOS transistor
  • Quasistatic, non-quasistatic, and noise models
  • Quantum phenomena in MOS transistors
  • Non-classical MOSFET structures
  • Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate
  • Appendix B : features of select compact MOSFET models
  • Appendix C : PSP two-point collocation method.

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