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Compact MOSFET models for VLSI design /
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concu...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hoboken, NJ : [Piscataway, NJ] :
John Wiley & Sons (Asia) ; IEEE Press,
©2009.
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| Temas: | |
| Acceso en línea: | Texto completo (Requiere registro previo con correo institucional) |
MARC
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| 100 | 1 | |a Bhattacharyya, A. B. |q (Amalendu Bhushan) | |
| 245 | 1 | 0 | |a Compact MOSFET models for VLSI design / |c A.B. Bhattacharyya. |
| 260 | |a Singapore ; |a Hoboken, NJ : |b John Wiley & Sons (Asia) ; |a [Piscataway, NJ] : |b IEEE Press, |c ©2009. | ||
| 300 | |a 1 online resource (xxiv, 432 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method. | |
| 588 | 0 | |a Print version record. | |
| 520 | |a Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI. | ||
| 590 | |a O'Reilly |b O'Reilly Online Learning: Academic/Public Library Edition | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration |x Design and construction. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Design and construction. | |
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| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |x Design and construction |2 fast | |
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| 650 | 7 | |a MOS-FET |2 gnd | |
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