Silicon carbide and related materials 2019 : selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan /

This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and relat...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Kyoto, Japan
Otros Autores: Yano, Hiroshi (Editor ), Ohshima, Takeshi (Editor ), Eto, Kazuma (Editor ), Harada, Shinsuke (Editor ), Mitani, Takeshi (Editor ), Tanaka, Yasunori (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Baech, Switzerland : Trans Tech Publications Ltd, [2020]
Colección:Materials science forum ; v. 1004.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
Crystal growth
Graphene
Nitrides
Silicon carbide
Silicon carbide > Electric properties
Silicon-carbide thin films
Conference papers and proceedings
Acceso en línea:Texto completo

MARC

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111 2 |a International Conference on Silicon Carbide and Related Materials  |n (18th :  |d 2019 :  |c Kyoto, Japan),  |j author. 
245 1 0 |a Silicon carbide and related materials 2019 :  |b selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan /  |c edited by Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Shinsuke Harada, Takeshi Mitani and Yasunori Tanaka. 
264 1 |a Baech, Switzerland :  |b Trans Tech Publications Ltd,  |c [2020] 
300 |a 1 online resource (j, 1172 pages) :  |b illustrations (some color), charts 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
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490 1 |a Materials science forum ;  |v volume 1004 
504 |a Includes bibliographical references and indexes. 
520 |a This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging. Silicon Carbide, Crystal Growth, Epitaxial Growth, Thin Films, Layer Growth, Etching, Wafer Machining, Characterization, Measurements, Point Defects, Extended Defects, Quantum Technologies, MOS Gate Stack, Metal-Oxide-Semiconductor Field-Effect Transistor, Bipolar Devices, Junction Field-Effect Transistor, Diodes, Barrier Schottky, Silicon Carbide Power Devices, High-Temperature Reliability, Integrated Circuits Packaging Materials Science, Manufacturing, Electronics. 
505 0 |a Intro -- Silicon Carbide and Related Materials 2019 -- Preface -- Table of Contents -- Chapter 1: Growth and Wafer Manufacturing -- 1.1: Bulk Crystal Growth -- Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method -- Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method -- Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method -- Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process 
505 8 |a Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer -- Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production -- Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals -- Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC -- An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis -- X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates -- 1.2: Epitaxial and Thin Film Growth 
505 8 |a Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications -- Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool -- Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool -- Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process -- Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al 
505 8 |a Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates -- 1.3: Growth of 3C-SiC Layer -- Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth -- 3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress -- Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC -- Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon -- Mono-Versus Poly-Crystalline SiC for Nuclear Applications -- Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations -- 1.4: Etching and Wafer Machining 
505 8 |a Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology -- Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size -- Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer -- Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen -- Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides -- SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat 
588 0 |a Online resource; title from digital title page (viewed on February 19, 2021). 
590 |a Knovel  |b ACADEMIC - General Engineering & Project Administration 
650 0 |a Silicon carbide  |v Congresses. 
650 0 |a Silicon carbide  |x Electric properties  |v Congresses. 
650 0 |a Silicon-carbide thin films  |v Congresses. 
650 0 |a Nitrides  |v Congresses. 
650 0 |a Graphene  |v Congresses. 
650 0 |a Crystal growth  |v Congresses. 
650 0 |a Wide gap semiconductors  |x Materials  |v Congresses. 
650 0 |a Wide gap semiconductors  |x Materials  |x Technological innovations  |v Congresses. 
650 6 |a Couches minces de carbure de silicium  |v Congrès. 
650 6 |a Nitrures  |v Congrès. 
650 6 |a Graphène  |v Congrès. 
650 6 |a Cristaux  |x Croissance  |v Congrès. 
650 6 |a Semi-conducteurs à large bande interdite  |x Matériaux  |v Congrès. 
650 6 |a Semi-conducteurs à large bande interdite  |x Matériaux  |x Innovations  |v Congrès. 
650 7 |a Crystal growth  |2 fast 
650 7 |a Graphene  |2 fast 
650 7 |a Nitrides  |2 fast 
650 7 |a Silicon carbide  |2 fast 
650 7 |a Silicon carbide  |x Electric properties  |2 fast 
650 7 |a Silicon-carbide thin films  |2 fast 
655 7 |a Conference papers and proceedings  |2 fast 
700 1 |a Yano, Hiroshi,  |e editor. 
700 1 |a Ohshima, Takeshi,  |e editor. 
700 1 |a Eto, Kazuma,  |e editor. 
700 1 |a Harada, Shinsuke,  |e editor. 
700 1 |a Mitani, Takeshi,  |e editor. 
700 1 |a Tanaka, Yasunori,  |e editor. 
776 0 8 |i Print version:  |a International Conference on Silicon Carbide and Related Materials (18th : 2019 : Kyoto, Japan).  |t Silicon Carbide and related materials 2019.  |d Baech, Switzerland : Scientific.Net, [2020]  |z 9783035715798  |w (OCoLC)1222782193 
830 0 |a Materials science forum ;  |v v. 1004. 
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938 |a EBSCOhost  |b EBSC  |n 2557032 
938 |a Trans Tech Publications, Ltd  |b TRAN  |n 10.4028/www.scientific.net/MSF.1004 
938 |a YBP Library Services  |b YANK  |n 301425067 
994 |a 92  |b IZTAP 

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