Silicon carbide and related materials 2019 : selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan /

This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and relat...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Kyoto, Japan
Otros Autores: Yano, Hiroshi (Editor ), Ohshima, Takeshi (Editor ), Eto, Kazuma (Editor ), Harada, Shinsuke (Editor ), Mitani, Takeshi (Editor ), Tanaka, Yasunori (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Baech, Switzerland : Trans Tech Publications Ltd, [2020]
Colección:Materials science forum ; v. 1004.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
Crystal growth
Graphene
Nitrides
Silicon carbide
Silicon carbide > Electric properties
Silicon-carbide thin films
Conference papers and proceedings
Acceso en línea:Texto completo
Descripción
Sumario:This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging. Silicon Carbide, Crystal Growth, Epitaxial Growth, Thin Films, Layer Growth, Etching, Wafer Machining, Characterization, Measurements, Point Defects, Extended Defects, Quantum Technologies, MOS Gate Stack, Metal-Oxide-Semiconductor Field-Effect Transistor, Bipolar Devices, Junction Field-Effect Transistor, Diodes, Barrier Schottky, Silicon Carbide Power Devices, High-Temperature Reliability, Integrated Circuits Packaging Materials Science, Manufacturing, Electronics.
Descripción Física:1 online resource (j, 1172 pages) : illustrations (some color), charts
Bibliografía:Includes bibliographical references and indexes.
ISBN:9783035735796
3035735794

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