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200429s2020 ne o 001 0 eng d |
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|a OPELS
|b eng
|e rda
|e pn
|c OPELS
|d EBLCP
|d OCLCF
|d UKAHL
|d UKMGB
|d OCLCQ
|d OCLCO
|d COM
|d OCLCQ
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|a GBC048794
|2 bnb
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|a 019759468
|2 Uk
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|a 9780128177877
|q (ePub ebook)
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|a 012817787X
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|z 9780128177860
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|z 0128177861
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|a AU@
|b 000067131199
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|a UKMGB
|b 019759468
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|a (OCoLC)1152528047
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|a 9780128177877
|b Ingram Content Group
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|a TK7875
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|a 621.381
|2 23
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|a UAMI
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|a Handbook of silicon based mems materials and technologies /
|c edited by Markku Tilli [and five others].
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|a Third edition.
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|a Amsterdam :
|b Elsevier,
|c 2020.
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|a 1 online resource
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Micro and nano technologies series
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|a Includes index.
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|a Print version record.
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|a Front Cover -- Handbook of Silicon Based MEMS Materials and Technologies -- Copyright Page -- Contents -- List of contributors -- Preface -- Where is silicon based MEMS heading to? -- References -- I. Silicon as MEMS Material -- 1 Properties of silicon -- 1.1 Properties of silicon -- 1.1.1 Crystallography of silicon -- 1.1.1.1 Miller index (hkl) system -- 1.1.1.2 Stereographic projection -- 1.1.2 Defects in silicon lattice -- 1.1.3 Mechanical properties of silicon -- 1.1.4 Electrical properties -- 1.1.4.1 Introduction-dopants and impurities in silicon
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|a 1.1.4.2 Piezoresistive effect in silicon -- General piezoresistive effect -- Strain -- Stress in anisotropic materials -- Strain effect on resistivity -- Linearity -- Effect of temperature and doping -- Example of a piezoresistive sensor design -- Surface effects -- References -- 2 Czochralski growth of silicon crystals -- 2.1 The Czochralski crystal-growing furnace -- 2.1.1 Crucible -- 2.1.2 Hot zone materials -- 2.1.3 Hot zone structure -- 2.1.4 Gas flow -- 2.2 Stages of growth process -- 2.2.1 Melting -- 2.2.2 Neck -- 2.2.3 Crown -- 2.2.4 Body -- 2.2.5 Tail -- 2.2.6 Shut-off
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|a 2.3 Selected issues of crystal growth -- 2.3.1 Diameter control -- 2.3.2 Doping -- 2.3.3 Hot zone lifetime -- 2.4 Improved thermal and gas-flow designs -- 2.5 Heat transfer -- 2.6 Melt convection -- 2.6.1 Free convection -- 2.6.2 Crucible rotation -- 2.6.3 Crystal rotation -- 2.6.4 Marangoni convection and gas shear -- 2.7 Magnetic fields -- 2.7.1 Cusp field -- 2.7.2 Transverse field -- 2.7.3 Melt flows under transverse field -- 2.7.4 Time-dependent fields -- 2.8 Hot recharging and continuous feed -- 2.8.1 Hot recharging -- 2.8.2 Charge topping -- 2.8.3 Crucible modifications
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|a 2.8.4 Continuous Czochralski growth -- 2.9 Heavily n-type doped silicon and constitutional supercooling -- 2.9.1 Constitutional supercooling -- 2.9.2 Melting-point depression -- 2.9.3 Origin of dopant gradient in the melt -- 2.9.4 Path to lower resistivity -- 2.10 Growth of large diameter crystals -- 2.10.1 Neck growth for large crystals -- 2.10.2 Neck extension -- 2.10.3 Additional stresses on neck -- 2.10.4 Dislocations oriented in (100) direction in large diameter crystals -- 2.10.5 Crucible wall temperature -- 2.10.6 Double-layered crucible structure -- 2.10.7 Crucible deformations
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|a 2.10.8 Intentional devitrification -- 2.10.9 Transverse or cusp field for very large crystals -- 2.10.10 Boosting crystal weight -- 2.10.11 Seed chuck -- 2.10.12 Additional challenges -- References -- Further reading -- 3 Properties of silicon crystals -- 3.1 Dopants and impurities -- 3.2 Typical impurity concentrations -- 3.3 Concentration of dopants and impurities in axial direction -- 3.4 Resistivity -- 3.5 Radial variation of impurities and resistivity -- 3.6 Thermal donors -- 3.7 Defects in silicon crystals
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|a Knovel
|b ACADEMIC - Electronics & Semiconductors
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650 |
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|a Microelectromechanical systems.
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650 |
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|a Silicon.
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650 |
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2 |
|a Micro-Electrical-Mechanical Systems
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650 |
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2 |
|a Silicon
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650 |
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|a Microsystèmes électromécaniques.
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|a Silicium.
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650 |
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|a silicon.
|2 aat
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650 |
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|a Microelectromechanical systems.
|2 fast
|0 (OCoLC)fst01019745
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650 |
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7 |
|a Silicon.
|2 fast
|0 (OCoLC)fst01118631
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700 |
1 |
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|a Tilli, Markku,
|e editor.
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776 |
0 |
8 |
|i Print version:
|t Handbook of silicon based mems materials and technologies.
|b Third edition.
|d Amsterdam : Elsevier, 2020
|z 9780128177860
|w (OCoLC)1151986311
|
830 |
|
0 |
|a Micro & nano technologies.
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856 |
4 |
0 |
|u https://appknovel.uam.elogim.com/kn/resources/kpHSBMEM12/toc
|z Texto completo
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938 |
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|a Askews and Holts Library Services
|b ASKH
|n AH35872890
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938 |
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|a ProQuest Ebook Central
|b EBLB
|n EBL6188842
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994 |
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|a 92
|b IZTAP
|