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Characterisation and control of defects in semiconductors /
The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation s...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Stevenage :
The Institution of Engineering and Technology,
2019.
|
| Colección: | Materials, circuits and devices series ;
45. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Characterisation and control of defects in semiconductors / |c edited by Filip Tuomisto. |
| 264 | 1 | |a Stevenage : |b The Institution of Engineering and Technology, |c 2019. | |
| 264 | 4 | |c ©2019 | |
| 300 | |a 1 online resource (596 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a IET Materials, Circuits & Devices Series ; |v 45 | |
| 520 | |a The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling. | ||
| 588 | 0 | |a Online resource; title from PDF title page (IET Digital, viewed January 13, 2020). | |
| 504 | |a Includes bibliographical references and index. | ||
| 590 | |a Knovel |b ACADEMIC - Computer Hardware Engineering | ||
| 650 | 0 | |a Ion implantation. | |
| 650 | 0 | |a Magnetic resonance. | |
| 650 | 0 | |a Semiconductor doping. | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Silicon. | |
| 650 | 2 | |a Silicon | |
| 650 | 6 | |a Ions |x Implantation. | |
| 650 | 6 | |a Résonance magnétique. | |
| 650 | 6 | |a Semi-conducteurs |x Dopage. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 6 | |a Silicium. | |
| 650 | 7 | |a silicon. |2 aat | |
| 650 | 7 | |a Ion implantation. |2 fast |0 (OCoLC)fst00978590 | |
| 650 | 7 | |a Magnetic resonance. |2 fast |0 (OCoLC)fst01005777 | |
| 650 | 7 | |a Semiconductor doping. |2 fast |0 (OCoLC)fst01112124 | |
| 650 | 7 | |a Semiconductors |x Materials. |2 fast |0 (OCoLC)fst01112237 | |
| 650 | 7 | |a Silicon. |2 fast |0 (OCoLC)fst01118631 | |
| 650 | 7 | |a crystal defects. |2 inspect | |
| 650 | 7 | |a ion beam effects. |2 inspect | |
| 650 | 7 | |a ion implantation. |2 inspect | |
| 650 | 7 | |a luminescence. |2 inspect | |
| 650 | 7 | |a magnetic resonance. |2 inspect | |
| 650 | 7 | |a microscopy. |2 inspect | |
| 650 | 7 | |a positron annihilation. |2 inspect | |
| 650 | 7 | |a semiconductor doping. |2 inspect | |
| 650 | 7 | |a semiconductor materials. |2 inspect | |
| 650 | 7 | |a silicon. |2 inspect | |
| 653 | |a semiconductor defects | ||
| 653 | |a electrically active defects | ||
| 653 | |a point defect luminescence | ||
| 653 | |a vibrational spectroscopy | ||
| 653 | |a magnetic resonance methods | ||
| 653 | |a muons | ||
| 653 | |a positron annihilation spectroscopy | ||
| 653 | |a first principles methods | ||
| 653 | |a microscopy | ||
| 653 | |a 3D atomic-scale studies | ||
| 653 | |a ion beam modification | ||
| 653 | |a ion beam analysis | ||
| 653 | |a channelling | ||
| 653 | |a silicon | ||
| 653 | |a elemental semiconductors | ||
| 653 | |a ion implantation | ||
| 653 | |a ion beam effects | ||
| 653 | |a semiconductor doping | ||
| 700 | 1 | |a Tuomisto, Filip, |e editor. | |
| 776 | 0 | 8 | |i Ebook version : |z 9781785616563 |
| 776 | 0 | 8 | |i Print version: |t Characterisation and control of defects in semiconductors. |d Stevenage : The Institution of Engineering and Technology, 2019 |z 1785616552 |z 9781785616556 |w (OCoLC)1091584905 |
| 830 | 0 | |a Materials, circuits and devices series ; |v 45. | |
| 856 | 4 | 0 | |u https://appknovel.uam.elogim.com/kn/resources/kpCCDS0001/toc |z Texto completo |
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