VLSI and Post-CMOS Electronics. Devices, circuits and interconnects / Volume 2 :

The following topics are dealt with: integrated circuit design; VLSI; technology CAD (electronics); MOSFET; III-V semiconductors; silicon; semiconductor device models; SRAM chips; three-dimensional integrated circuits; permittivity.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Dhiman, Rohit (Editor ), Chandel, Rajeevan (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Stevenage : IET, 2019.
Colección:Materials, circuits and devices series ; 73.
Temas:
Dielectric measurements.
Dielectrics.
Electric resistance.
Electronic apparatus and appliances.
Integrated circuits.
Integrated circuits > Computer-aided design.
Integrated circuits > Design and construction.
Integrated circuits > Very large scale integration.
Metal oxide semiconductor field-effect transistors.
Semiconductors.
Silicon.
Mesures diélectriques.
Diélectriques.
Résistance électrique.
Circuits intégrés.
Circuits intégrés > Conception assistée par ordinateur.
Circuits intégrés > Conception et construction.
Circuits intégrés à très grande échelle.
Transistors MOSFET.
Semi-conducteurs.
Silicium.
resistivity.
semiconductor.
silicon.
CMOS integrated circuits.
elemental semiconductors.
III-V semiconductors.
integrated circuit design.
MOSFET.
permittivity.
semiconductor device models.
SRAM chips.
technology CAD (electronics)
three-dimensional integrated circuits.
VLSI.
integrated circuit design
VLSI
MOSFET
III-V semiconductors
silicon
semiconductor device models
SRAM chips
three-dimensional integrated circuits
permittivity
Acceso en línea:Texto completo

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