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Characterization of wide bandgap power semiconductor devices /

This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semicondu...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Wang, Fei (Fred) (Autor), Zhang, Zheyu (Autor), Jones, Edward A. (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Stevenage, United Kingdom : Institution of Engineering and Technology, 2018.
Colección:IET energy engineering series ; 128.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 i 4500
001 KNOVEL_on1051214848
003 OCoLC
005 20231027140348.0
006 m o d
007 cr cn|||||||||
008 180910t20182018enka ob 001 0 eng d
040 |a CDN  |b eng  |e rda  |e pn  |c CDN  |d CDN  |d N$T  |d YDX  |d EBLCP  |d OTZ  |d OCLCF  |d STF  |d MERUC  |d LVT  |d CUS  |d UAB  |d KNOVL  |d ESU  |d CEF  |d MERER  |d CUV  |d OCLCQ  |d VLB  |d UKAHL  |d OCLCQ  |d K6U  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCA  |d BRX  |d OCLCQ 
019 |a 1053582309  |a 1162337419 
020 |a 9781785614927  |q (electronic bk.) 
020 |a 1785614924  |q (electronic bk.) 
020 |a 9781523119349  |q (electronic bk.) 
020 |a 1523119349  |q (electronic bk.) 
020 |z 9781785614910 
020 |z 1785614916 
029 1 |a AU@  |b 000065132409 
035 |a (OCoLC)1051214848  |z (OCoLC)1053582309  |z (OCoLC)1162337419 
050 4 |a QC611.8.W53  |b W36 2018eb 
072 7 |a TEC  |x 009070  |2 bisacsh 
072 7 |a B0100  |2 inspec 
072 7 |a B1110  |2 inspec 
072 7 |a B2560P  |2 inspec 
082 0 4 |a 621.38152  |2 23 
049 |a UAMI 
100 1 |a Wang, Fei  |q (Fred),  |e author. 
245 1 0 |a Characterization of wide bandgap power semiconductor devices /  |c Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones. 
264 1 |a Stevenage, United Kingdom :  |b Institution of Engineering and Technology,  |c 2018. 
264 4 |c ©2018 
300 |a 1 online resource (ix, 333 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a IET Energy Engineering ;  |v 128 
588 0 |a Print version record. 
504 |a Includes bibliographical references and index. 
505 0 |a Intro; Contents; Biographies; Acknowledgments; 1. Introduction; 1.1. Overview of WBG devices; 1.1.1. WBG devices in comparison to Si devices; 1.1.2. WBG device status; 1.2. Motivation for WBG device characterization; 1.3. About this book; References; 2. Pulsed static characterization; 2.1. Fundamentals of pulsed I-V testing; 2.2. Test equipment description; 2.3. Test fixture selection/design; 2.4. Junction temperature control; 2.5. Cryogenic device testing; 2.6. Pulse waveform timing; 2.7. Output (Id-Vds) characteristic; 2.8. Transfer (Id-Vgs) characteristic 
505 8 |a 2.9. Gate current (Ig, ss-Vgs) characteristic2.10. Drain-source leakage (Id, off-Vds) characteristic; 2.11. Summary; References; 3. Junction capacitance characterization; 3.1. Fundamentals of C-V testing; 3.2. Test equipment description; 3.3. Test fixture selection/design and calibration; 3.4. Output capacitance (Coss) characteristic; 3.5. Input capacitance (Ciss) characteristic; 3.6. Reverse transfer capacitance (Crss) characteristic; 3.7. Gate charge (Qg) characteristic; 3.8. Calculation of Coss-related switching energies; 3.9. Summary; References; 4. Fundamentals of dynamic characterization 
505 8 |a 4.1. Switching commutation analysis4.2. Fundamentals of DPT; 4.3. DPT design; 4.3.1. Load inductor; 4.3.2. DC source; 4.3.3. DC capacitor; 4.3.4. Bleeder resistor; 4.4. DPT control; 4.5. Case study; 4.5.1. Load inductor; 4.5.2. DC source; 4.5.3. DC capacitor bank; 4.5.4. Bleeder resistor; 4.5.5. DPT control; 4.6. Summary; References; 5. Gate drive for dynamic characterization; 5.1. Gate drive fundamentals; 5.2. Gate drive-related key device characteristics; 5.2.1. Gate drive design considering device static characteristics; 5.2.2. Gate drive design considering device dynamic characteristics 
505 8 |a 5.3. Gate drive design5.3.1. Signal isolator; 5.3.2. Isolated power supply; 5.3.3. Gate drive IC; 5.3.4. Gate resistor; 5.3.5. Decoupling capacitor; 5.4. Case study; 5.4.1. Signal isolator; 5.4.2. Isolated power supply; 5.4.3. Gate drive IC; 5.4.4. Gate resistor; 5.4.5. Decoupling capacitor; 5.5. Summary; References; 6. Layout design and parasitic management; 6.1. Impact of parasitics on the switching performance; 6.1.1. Gate loop parasitics; 6.1.2. Power loop parasitics; 6.1.3. Common parasitics; 6.2. DPT layout design; 6.3. Case study; 6.3.1. Brief overview of WBG devices' package 
505 8 |a 6.3.2. Case study 1: TO-247 package SiC MOSFETs6.3.3. Case study 2: surface-mount WBG device; 6.3.4. With consideration of current measurement in DPT; 6.3.5. Gate drive; 6.4. Summary; References; 7. Protection design for double pulse test; 7.1. Overview of state-of-the-art protection scheme for WBG devices; 7.2. Solid-state circuit breaker; 7.2.1. Operation principle; 7.2.2. Circuit implementation and design consideration; 7.2.3. Test setup and procedure; 7.2.4. Case study; 7.3. Consideration for high-voltage WBG device DPT; 7.3.1. Safety consideration; 7.3.2. Protection scheme; 7.4. Summary 
520 |a This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. 
590 |a Knovel  |b ACADEMIC - Electronics & Semiconductors 
650 0 |a Wide gap semiconductors. 
650 0 |a Power semiconductors. 
650 0 |a Electric capacity. 
650 6 |a Semi-conducteurs à large bande interdite. 
650 6 |a Semi-conducteurs de puissance. 
650 6 |a Capacité électrique. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Electric capacity.  |2 fast  |0 (OCoLC)fst00904525 
650 7 |a Power semiconductors.  |2 fast  |0 (OCoLC)fst01074382 
650 7 |a Wide gap semiconductors.  |2 fast  |0 (OCoLC)fst01174923 
650 7 |a capacitance.  |2 inspect 
650 7 |a network topology.  |2 inspect 
650 7 |a power semiconductor devices.  |2 inspect 
650 7 |a semiconductor device models.  |2 inspect 
650 7 |a wide band gap semiconductors.  |2 inspect 
700 1 |a Zhang, Zheyu,  |e author. 
700 1 |a Jones, Edward A.,  |e author. 
776 0 8 |i Print version:  |a Wang, Fei (Fred).  |t Characterization of wide bandgap power semiconductor devices.  |d London : Institution of Engineering and Technology, 2018  |z 1785614916  |w (OCoLC)1022475837 
830 0 |a IET energy engineering series ;  |v 128. 
856 4 0 |u https://appknovel.uam.elogim.com/kn/resources/kpCWBPSD06/toc  |z Texto completo 
938 |a Askews and Holts Library Services  |b ASKH  |n AH33885536 
938 |a ProQuest Ebook Central  |b EBLB  |n EBL5520140 
938 |a EBSCOhost  |b EBSC  |n 1882218 
938 |a YBP Library Services  |b YANK  |n 15703395 
994 |a 92  |b IZTAP