Characterization of wide bandgap power semiconductor devices /

This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semicondu...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores principales: Wang, Fei (Fred) (Autor), Zhang, Zheyu (Autor), Jones, Edward A. (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Stevenage, United Kingdom : Institution of Engineering and Technology, 2018.
Colección:IET energy engineering series ; 128.
Temas:
Wide gap semiconductors.
Power semiconductors.
Electric capacity.
Semi-conducteurs à large bande interdite.
Semi-conducteurs de puissance.
Capacité électrique.
TECHNOLOGY & ENGINEERING > Mechanical.
capacitance.
network topology.
power semiconductor devices.
semiconductor device models.
wide band gap semiconductors.
Acceso en línea:Texto completo
Descripción
Sumario:This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
Descripción Física:1 online resource (ix, 333 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:9781785614927
1785614924
9781523119349
1523119349

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