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Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA /
This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Zurich, Switzerland :
Trans Tech Publications, Limited,
2018.
|
| Colección: | Materials science forum ;
v. 924. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Conference on Silicon Carbide and Related Materials |d (2017 : |c Washington, D.C.) | |
| 245 | 1 | 0 | |a Silicon carbide and related materials 2017 : |b selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA / |c edited by Robert Stahlbush [and five others]. |
| 260 | |a Zurich, Switzerland : |b Trans Tech Publications, Limited, |c 2018. | ||
| 300 | |a 1 online resource (1014 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum ; |v volumes 924 | |
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Intro; Silicon Carbide and Related Materials 2017; Preface; Table of Contents; Chapter 1: Bulk and Epitaxial Growth; 1.1: Bulk Growth; SEMI Standards for SiC Wafers; Optimization of 150 mm 4H SiC Substrate Crystal Quality; Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method; Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals; Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process. | |
| 505 | 8 | |a The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC CrystalDevelopment of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique; Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si; Dislocation Behavior in Bulk Crystals Grown by TSSG Method; Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC; Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal. | |
| 505 | 8 | |a Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in SolventInfluence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC; Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method; 1.2: Epitaxial Growth; Status and Trends in Epitaxy and Defects; 99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD; Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor. | |
| 505 | 8 | |a Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall ReactorGrowth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer; High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool; Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor; Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor; Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition. | |
| 505 | 8 | |a Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary ReactorReduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool; Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC; CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode; Hot Filament CVD Growth of 4H-SiC Epitaxial Layers; Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films; Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed. | |
| 500 | |a Chapter 2: Defects, Material Studies and Characterization. | ||
| 520 | |a This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science. | ||
| 590 | |a Knovel |b ACADEMIC - General Engineering & Project Administration | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Silicon carbide |v Congresses. | |
| 650 | 0 | |a Silicon carbide |x Electric properties |v Congresses. | |
| 650 | 0 | |a Silicon-carbide thin films |v Congresses. | |
| 650 | 0 | |a Nitrides |v Congresses. | |
| 650 | 0 | |a Graphene |v Congresses. | |
| 650 | 0 | |a Crystal growth |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |x Technological innovations |v Congresses. | |
| 650 | 6 | |a Couches minces de carbure de silicium |v Congrès. | |
| 650 | 6 | |a Nitrures |v Congrès. | |
| 650 | 6 | |a Graphène |v Congrès. | |
| 650 | 6 | |a Cristaux |x Croissance |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite |x Matériaux |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite |x Matériaux |x Innovations |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Crystal growth |2 fast | |
| 650 | 7 | |a Graphene |2 fast | |
| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 7 | |a Silicon carbide |x Electric properties |2 fast | |
| 650 | 7 | |a Silicon-carbide thin films |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Stahlbush, Robert, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a Stahlbush, Robert. |t Silicon Carbide and Related Materials 2017. |d Zurich : Trans Tech Publications, Limited, ©2018 |z 9783035711455 |
| 830 | 0 | |a Materials science forum ; |v v. 924. | |
| 856 | 4 | 0 | |u https://appknovel.uam.elogim.com/kn/resources/kpSCRM000F/toc |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL5432972 | ||
| 938 | |a EBSCOhost |b EBSC |n 1863946 | ||
| 938 | |a Trans Tech Publications, Ltd |b TRAN |n 10.4028/www.scientific.net/MSF.924 | ||
| 994 | |a 92 |b IZTAP | ||