Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA /

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This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide and Related Materials Washington, D.C.
Otros Autores: Stahlbush, Robert (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Zurich, Switzerland : Trans Tech Publications, Limited, 2018.
Colección:Materials science forum ; v. 924.
Temas:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
TECHNOLOGY & ENGINEERING > Engineering (General)
TECHNOLOGY & ENGINEERING > Reference.
Crystal growth
Graphene
Nitrides
Silicon carbide
Silicon carbide > Electric properties
Silicon-carbide thin films
Conference papers and proceedings
Acceso en línea:Texto completo
Descripción
Sumario:This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.
Notas:Chapter 2: Defects, Material Studies and Characterization.
Descripción Física:1 online resource (1014 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:9781523122844
1523122846
9783035731453
3035731454

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