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Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Gelugor :
Penerbit USM,
2017.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Half Title Page; Title Page; Copyright Page; Contents; List of Tables; List of Figures; List of Symbols; Preface; List of Abbreviations; 1 Introduction; 2 Overview of the Fabrication of Porous GaN via Wet Etching Method; 2.1 Chemical etching; 2.2 Anodic etching; 2.3 Metal-assisted electroless etching; 2.4 UV-assisted photoelectrochemical etching; 3 Attenuated Total Reflection Study of Porous Semiconductor; 4 Methodology; 4.1 Sample preparation; 4.2 Experimental set-up for electrochemical etching approach; 4.3 Characterizations; 4.3.1 FESEM measurement.
- 4.3.2 Polarized IR-ATR Measurement4.3.3 PL measurement; 4.3.4 ATR curve fitting; 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films; 5.1 FESEM analysis; 5.2 p-polarized ATR study; 5.3 PL analysis; 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 6.1 FESEM analysis; 6.2 p-polarized ATR study; 6.3 PL analysis; 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 7.1 FESEM analysis.
- 7.2 p-polarized ATR study8 Conclusion; Appendix; References; Index; Back Cover.