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Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Cheah, Sook Fong
Otros Autores: Ng, Sha Shiong
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Gelugor : Penerbit USM, 2017.
Temas:
Acceso en línea:Texto completo

MARC

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245 1 0 |a Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method. 
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505 0 |a Cover; Half Title Page; Title Page; Copyright Page; Contents; List of Tables; List of Figures; List of Symbols; Preface; List of Abbreviations; 1 Introduction; 2 Overview of the Fabrication of Porous GaN via Wet Etching Method; 2.1 Chemical etching; 2.2 Anodic etching; 2.3 Metal-assisted electroless etching; 2.4 UV-assisted photoelectrochemical etching; 3 Attenuated Total Reflection Study of Porous Semiconductor; 4 Methodology; 4.1 Sample preparation; 4.2 Experimental set-up for electrochemical etching approach; 4.3 Characterizations; 4.3.1 FESEM measurement. 
505 8 |a 4.3.2 Polarized IR-ATR Measurement4.3.3 PL measurement; 4.3.4 ATR curve fitting; 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films; 5.1 FESEM analysis; 5.2 p-polarized ATR study; 5.3 PL analysis; 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 6.1 FESEM analysis; 6.2 p-polarized ATR study; 6.3 PL analysis; 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 7.1 FESEM analysis. 
505 8 |a 7.2 p-polarized ATR study8 Conclusion; Appendix; References; Index; Back Cover. 
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