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Handbook of thin film deposition /
Handbook of thin film deposition, Fourth edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials f...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford, United Kingdom ; Cambridge, MA, United States :
William Andrew, an imprint of Elsevier,
[2018]
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| Edición: | Fourth edition. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Handbook of Thin Film Deposition; Copyright Page; Dedication; Contents; List of Contributors; Biographies; Preface; I. Scaling; 1 A Perspective on Today's Scaling Challenges and Possible Future Directions; 1.1 Introduction; 1.2 Review and Update of Generalized Scaling; 1.3 Energy/Performance Considerations; 1.4 Design Issues with Back-Gated Thin SOI CMOS; 1.5 Carrier Confinement and Quantization Effects; 1.6 Potential of Low-Temperature Operation; 1.7 Conclusion; Acknowledgments; References; 2 Limits and Hurdles to Continued CMOS Scaling; 2.1 Terminology; 2.2 Costs.
- 2.3 ITRS Roadmap-based Issues; 2.4 Issues in Device Scaling; 2.5 Scaling Basics and Results; 2.5.1 Contact Spacing and SRAM Size; 2.6 Lithography; 2.6.1 Resolution; 2.7 Litho Wavelength Evolution; 2.7.1 CMOS Scaling and Various Leakages; 2.7.2 Ioff Leakage, Tunneling Current, Source-Drain Leakage; 2.7.3 Increase of ON-current; 2.7.4 Leakage Currents and the Limits Imposed by Them; 2.7.5 Gate Overlap Capacitance; 2.7.6 Subthreshold Leakage; 2.7.7 Hot-e Leakage; 2.8 Limits created by a falling Vt and Vcc; 2.9 Scaling Limits and Device Limitations--Roadmap Based; 2.9.1 Scaling of Memory: GIDL.
- 2.9.2 New Device Features and New Materials; 2.9.3 Use of Si-Ge and strained layers to enhance mobility: is this scalable?; 2.9.4 New Materials: Graphene; 2.10 Back-End Scaling Issues; 2.10.1 Back-End Scaling: Contact Pitch; 2.10.2 SRAM Cell Size; 2.10.3 Metal Layers: Metal/Dielectric Scaling/the Need for New Materials; 2.10.4 Thermal Conductivity Limits: Cooling Issues; 2.10.5 Low-temperature Liquid Nitrogen Cooled Computers; 2.10.6 Thermodynamic Considerations: Noise; 2.11 Fluctation in Dopant Distribution: Effect on Vt Thermodynamic issues.
- 2.11.1 Thermal Fluctuations, Thermodynamics of Computations: the Work of Bennett, Keyes, and Feynman; 2.11.2 Heat Production and Chip Cooling; 2.12 Considerations in Heat Production; 2.13 Conclusions; References; Classic Papers; Cost of Fabricators; ITRS Roadmap Publications; Lithography; Device Scaling Limits; Metal Gates; FINFETS; NanoWires; Leakage Currents in Transistors; Gate Leakage; Leakages as a Limiter in Scaling; References to Graphene; Heat Production; Also see chapter 4 on Thermal Limits; This Handbook; Limits of Computing; Low-temperature Electronics; Further Reading.
- 3 Reliability Issues: Reliability Imposed Limits to Scaling; 3.1 Introduction and History; 3.1.1 History of Reliability; 3.1.2 New and Traditional Views of Reliability; 3.1.3 Concerns of Reliability; 3.1.4 Display of Reliability Data; 3.2 Reliability Testing Procedures; 3.3 Front-End Reliability Issues Impacting Scaling and Various Leakages; 3.4 Back-end Reliability; 3.4.1 Thermally Activated Failures; Arrhenius Equation and Electromigration; 3.4.2 Electromigration and Black's equation; 3.4.3 Physically based models of electromigration: From Black's equation to modern TCAD models.